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MJD44H11G

ON Semiconductor MJD44H11G

Part Number:
MJD44H11G
Manufacturer:
ON Semiconductor
Ventron No:
2465443-MJD44H11G
Description:
TRANS NPN 80V 8A DPAK
ECAD Model:
Datasheet:
MJD44H11G

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Specifications
ON Semiconductor MJD44H11G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD44H11G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    80V
  • Max Power Dissipation
    1.75W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    8A
  • Frequency
    85MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJD44H11
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.75W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    85MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    8A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 4A 1V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 400mA, 8A
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    85MHz
  • Collector Emitter Saturation Voltage
    1V
  • Collector Base Voltage (VCBO)
    5V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    60
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD44H11G Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 8A.In this part, there is a transition frequency of 85MHz.The maximum collector current is 8A volts.

MJD44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz


MJD44H11G Applications
There are a lot of ON Semiconductor
MJD44H11G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD44H11G More Descriptions
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
8 A, 80 V NPN Bipolar Power Transistor
Trans GP BJT NPN 80V 8A 1750mW Automotive 3-Pin(2 Tab) DPAK Tube
MJD Series 80 V 8 A NPN Complementary Power Transistor - TO-252
Transistor MJD44H11 General Purpose NPN 80 Volt 8 Amp DPAK
Transistor, Bipolar, Si, NPN, Power, VCEO 80VDC, IC 8A, PD 20W, DPAK, hFE 40,VCEO 80V | ON Semiconductor MJD44H11G
TRANSISTOR, NPN, D-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 85MHz; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor Case Style:
Rf Transistor, Npn, 80V, 85Mhz Dpak; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:85Mhzrohs Compliant: Yes |Onsemi MJD44H11G.
Product Comparison
The three parts on the right have similar specifications to MJD44H11G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Halogen Free
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Weight
    Termination
    Terminal Finish
    View Compare
  • MJD44H11G
    MJD44H11G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    80V
    1.75W
    GULL WING
    260
    8A
    85MHz
    40
    MJD44H11
    3
    R-PSSO-G2
    1
    Single
    1.75W
    COLLECTOR
    SWITCHING
    Halogen Free
    85MHz
    NPN
    NPN
    80V
    8A
    40 @ 4A 1V
    1μA
    1V @ 400mA, 8A
    80V
    85MHz
    1V
    5V
    5V
    60
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD47T4
    MJD47T4
    STMicroelectronics
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    1V @ 200mA, 1A
    NPN
    D-Pak
    -
    15W
    Tape & Reel (TR)
    TO-252-3, DPak (2 Leads Tab), SC-63
    150°C (TJ)
    Surface Mount
    10MHz
    30 @ 300mA, 10V
    100µA
    1A
    -
    -
    -
    MJD44H11G vs MJD47T4
  • MJD45H11-1G
    MJD45H11-1G
    ON Semiconductor
    ACTIVE (Last Updated: 15 hours ago)
    8 Weeks
    Tin
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    NO
    4
    SILICON
    -55°C~150°C TJ
    Tube
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -80V
    1.75W
    -
    260
    -8A
    90MHz
    40
    MJD45H11
    4
    R-PSIP-T3
    1
    Single
    1.75W
    COLLECTOR
    SWITCHING
    Halogen Free
    90MHz
    PNP
    PNP
    80V
    8A
    40 @ 4A 1V
    1μA
    1V @ 400mA, 8A
    80V
    40MHz
    1V
    5V
    5V
    60
    6.22mm
    6.73mm
    2.38mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MJD44H11G vs MJD45H11-1G
  • MJD42CG
    MJD42CG
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    2 Weeks
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -100V
    1.75W
    GULL WING
    260
    -6A
    3MHz
    40
    MJD42
    3
    R-PSSO-G2
    1
    Single
    1.75W
    COLLECTOR
    SWITCHING
    -
    3MHz
    PNP
    PNP
    100V
    6A
    15 @ 3A 4V
    50μA
    1.5V @ 600mA, 6A
    100V
    3MHz
    1.5V
    100V
    5V
    15
    2.3876mm
    6.7056mm
    6.223mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4.535924g
    SMD/SMT
    Tin (Sn)
    MJD44H11G vs MJD42CG
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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