ON Semiconductor MJD42CT4G
- Part Number:
- MJD42CT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068709-MJD42CT4G
- Description:
- TRANS PNP 100V 6A DPAK
- Datasheet:
- MJD42CT4G
ON Semiconductor MJD42CT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD42CT4G.
- Lifecycle StatusACTIVE (Last Updated: 10 hours ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation20W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-6A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD42
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.75W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current6A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 6A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Height2.38mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD42CT4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
MJD42CT4G Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
MJD42CT4G Applications
There are a lot of ON Semiconductor
MJD42CT4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
MJD42CT4G Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
MJD42CT4G Applications
There are a lot of ON Semiconductor
MJD42CT4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD42CT4G More Descriptions
ON Semi MJD42CT4G PNP Bipolar Transistor, 6 A, 100 V, 3-Pin DPAK | ON Semiconductor MJD42CT4G
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
6.0 A, 100 V PNP Bipolar Power Transistor
MJD Series 100 V 6 A PNP Complementary Power Transistor - TO-252-3
Trans GP BJT PNP 100V 6A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Transistor, PNP, 100V, 6A, TO252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation
TRANSISTOR, PNP, 100V, 6A, TO252; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 20W; DC Collector Current: 6A; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
6.0 A, 100 V PNP Bipolar Power Transistor
MJD Series 100 V 6 A PNP Complementary Power Transistor - TO-252-3
Trans GP BJT PNP 100V 6A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Transistor, PNP, 100V, 6A, TO252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation
TRANSISTOR, PNP, 100V, 6A, TO252; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 20W; DC Collector Current: 6A; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C
The three parts on the right have similar specifications to MJD42CT4G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishMountReach Compliance CodeQualification StatusTerminationView Compare
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MJD42CT4GACTIVE (Last Updated: 10 hours ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES34.535924gSILICON-65°C~150°C TJTape & Reel (TR)2002e3yesActive1 (Unlimited)2EAR99Other Transistors-100V20WGULL WING260-6A3MHz40MJD423R-PSSO-G21Single1.75WCOLLECTORSWITCHING3MHzPNPPNP100V6A15 @ 3A 4V50μA1.5V @ 600mA, 6A100V3MHz1.5V100V100V5V302.38mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free------
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ACTIVE (Last Updated: 18 hours ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3-SILICON-65°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)2EAR99Other Transistors100V1.75WGULL WING2606A3MHz40MJD413R-PSSO-G21Single1.75WCOLLECTORSWITCHING3MHzNPNNPN100V6A15 @ 3A 4V50μA1.5V @ 600mA, 6A100V3MHz1.5V100V100V5V30----NoROHS3 CompliantLead FreeTin (Sn)----
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-3-SILICON-65°C~150°C TJTube2009e0-Obsolete1 (Unlimited)2EAR99Other Transistors250V1.56WGULL WING2401A10MHz30MJD473R-PSSO-G21Single1.56WCOLLECTORSWITCHING10MHzNPNNPN250V1A30 @ 300mA 10V200μA1V @ 200mA, 1A250V10MHz1V-350V5V30-----Non-RoHS CompliantContains LeadTin/Lead (Sn/Pb)Surface Mountnot_compliantNot Qualified-
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ACTIVE (Last Updated: 1 day ago)2 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES34.535924gSILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)2EAR99Other Transistors-100V1.75WGULL WING260-6A3MHz40MJD423R-PSSO-G21Single1.75WCOLLECTORSWITCHING3MHzPNPPNP100V6A15 @ 3A 4V50μA1.5V @ 600mA, 6A100V3MHz1.5V-100V5V152.3876mm6.7056mm6.223mmNo SVHCNoROHS3 CompliantLead FreeTin (Sn)---SMD/SMT
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