MJD42CT4G

ON Semiconductor MJD42CT4G

Part Number:
MJD42CT4G
Manufacturer:
ON Semiconductor
Ventron No:
3068709-MJD42CT4G
Description:
TRANS PNP 100V 6A DPAK
ECAD Model:
Datasheet:
MJD42CT4G

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Specifications
ON Semiconductor MJD42CT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD42CT4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 10 hours ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -100V
  • Max Power Dissipation
    20W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -6A
  • Frequency
    3MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJD42
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.75W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    3MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    6A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    15 @ 3A 4V
  • Current - Collector Cutoff (Max)
    50μA
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 600mA, 6A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    3MHz
  • Collector Emitter Saturation Voltage
    1.5V
  • Max Breakdown Voltage
    100V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    30
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD42CT4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.

MJD42CT4G Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz


MJD42CT4G Applications
There are a lot of ON Semiconductor
MJD42CT4G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD42CT4G More Descriptions
ON Semi MJD42CT4G PNP Bipolar Transistor, 6 A, 100 V, 3-Pin DPAK | ON Semiconductor MJD42CT4G
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
6.0 A, 100 V PNP Bipolar Power Transistor
MJD Series 100 V 6 A PNP Complementary Power Transistor - TO-252-3
Trans GP BJT PNP 100V 6A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Transistor, PNP, 100V, 6A, TO252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation
TRANSISTOR, PNP, 100V, 6A, TO252; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 20W; DC Collector Current: 6A; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C
Product Comparison
The three parts on the right have similar specifications to MJD42CT4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Mount
    Reach Compliance Code
    Qualification Status
    Termination
    View Compare
  • MJD42CT4G
    MJD42CT4G
    ACTIVE (Last Updated: 10 hours ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    4.535924g
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2002
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -100V
    20W
    GULL WING
    260
    -6A
    3MHz
    40
    MJD42
    3
    R-PSSO-G2
    1
    Single
    1.75W
    COLLECTOR
    SWITCHING
    3MHz
    PNP
    PNP
    100V
    6A
    15 @ 3A 4V
    50μA
    1.5V @ 600mA, 6A
    100V
    3MHz
    1.5V
    100V
    100V
    5V
    30
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • MJD41CRLG
    ACTIVE (Last Updated: 18 hours ago)
    8 Weeks
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    -
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    100V
    1.75W
    GULL WING
    260
    6A
    3MHz
    40
    MJD41
    3
    R-PSSO-G2
    1
    Single
    1.75W
    COLLECTOR
    SWITCHING
    3MHz
    NPN
    NPN
    100V
    6A
    15 @ 3A 4V
    50μA
    1.5V @ 600mA, 6A
    100V
    3MHz
    1.5V
    100V
    100V
    5V
    30
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
    -
    -
    -
  • MJD47
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    2009
    e0
    -
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    250V
    1.56W
    GULL WING
    240
    1A
    10MHz
    30
    MJD47
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    SWITCHING
    10MHz
    NPN
    NPN
    250V
    1A
    30 @ 300mA 10V
    200μA
    1V @ 200mA, 1A
    250V
    10MHz
    1V
    -
    350V
    5V
    30
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Tin/Lead (Sn/Pb)
    Surface Mount
    not_compliant
    Not Qualified
    -
  • MJD42CG
    ACTIVE (Last Updated: 1 day ago)
    2 Weeks
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    4.535924g
    SILICON
    -65°C~150°C TJ
    Tube
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -100V
    1.75W
    GULL WING
    260
    -6A
    3MHz
    40
    MJD42
    3
    R-PSSO-G2
    1
    Single
    1.75W
    COLLECTOR
    SWITCHING
    3MHz
    PNP
    PNP
    100V
    6A
    15 @ 3A 4V
    50μA
    1.5V @ 600mA, 6A
    100V
    3MHz
    1.5V
    -
    100V
    5V
    15
    2.3876mm
    6.7056mm
    6.223mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
    -
    -
    SMD/SMT
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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