ON Semiconductor MJD44H11-001

Name: MJD44H11-001
Brand: ON Semiconductor
SKU: 2466863-MJD44H11-001
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD44H11-001

Manufacturer:: ON Semiconductor

Ventron No:: 2466863-MJD44H11-001

Description:: TRANS NPN 80V 8A IPAK

ECAD Model:

Datasheet:: MJD44H11-001

Specifications

ON Semiconductor MJD44H11-001 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD44H11-001.

Lifecycle Status
OBSOLETE (Last Updated: 2 weeks ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.75W
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
8A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
MJD44H11
Pin Count
4
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
85MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
85MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
5V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

MJD44H11-001 Overview
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (8A).85MHz is present in the transition frequency.Maximum collector currents can be below 8A volts.

MJD44H11-001 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz

MJD44H11-001 Applications
There are a lot of ON Semiconductor
MJD44H11-001 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD44H11-001 More Descriptions

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
8 A, 80 V NPN Bipolar Power Transistor
RES SMD 6.19K OHM 1% 1/2W 1206

Product Comparison

The three parts on the right have similar specifications to MJD44H11-001.

Image

Part Number

Manufacturer

Lifecycle Status

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Mount

Terminal Form

Frequency

Power Dissipation

Factory Lead Time

Contact Plating

Weight

Max Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
MJD44H11-001

ON Semiconductor

OBSOLETE (Last Updated: 2 weeks ago)

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

4

SILICON

-55°C~150°C TJ

Tube

2003

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

80V

1.75W

240

not_compliant

8A

30

MJD44H11

4

R-PSIP-T3

Not Qualified

1

Single

COLLECTOR

SWITCHING

85MHz

NPN

NPN

1V

8A

40 @ 4A 1V

1μA

1V @ 400mA, 8A

80V

85MHz

1V

5V

5V

60

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJD47T4

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

250V

1V @ 200mA, 1A

NPN

D-Pak

-

15W

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

150°C (TJ)

Surface Mount

10MHz

30 @ 300mA, 10V

100µA

1A

-

-

-

-

-

-

-

-

-

-

-

-

-

MJD44H11-001 vs MJD47T4
MJD47

ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

3

SILICON

-65°C~150°C TJ

Tube

2009

e0

-

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

250V

1.56W

240

not_compliant

1A

30

MJD47

3

R-PSSO-G2

Not Qualified

1

Single

COLLECTOR

SWITCHING

10MHz

NPN

NPN

250V

1A

30 @ 300mA 10V

200μA

1V @ 200mA, 1A

250V

10MHz

1V

350V

5V

30

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

GULL WING

10MHz

1.56W

-

-

-

-

-

-

-

-

-

MJD44H11-001 vs MJD47
MJD42CT4G

ON Semiconductor

ACTIVE (Last Updated: 10 hours ago)

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2002

e3

yes

Active

1 (Unlimited)

2

EAR99

-

Other Transistors

-100V

20W

260

-

-6A

40

MJD42

3

R-PSSO-G2

-

1

Single

COLLECTOR

SWITCHING

3MHz

PNP

PNP

100V

6A

15 @ 3A 4V

50μA

1.5V @ 600mA, 6A

100V

3MHz

1.5V

100V

5V

30

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GULL WING

3MHz

1.75W

8 Weeks

Tin

4.535924g

100V

2.38mm

6.73mm

6.22mm

No SVHC

No

MJD44H11-001 vs MJD42CT4G