ON Semiconductor MJB44H11G
- Part Number:
- MJB44H11G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845308-MJB44H11G
- Description:
- TRANS NPN 80V 10A D2PAK
- Datasheet:
- MJB44H11G
ON Semiconductor MJB44H11G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJB44H11G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation50W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating10A
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJB44H11
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A 1V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)5V
- Emitter Base Voltage (VEBO)5V
- hFE Min60
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJB44H11G Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.In this part, there is a transition frequency of 50MHz.The maximum collector current is 10A volts.
MJB44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJB44H11G Applications
There are a lot of ON Semiconductor
MJB44H11G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.In this part, there is a transition frequency of 50MHz.The maximum collector current is 10A volts.
MJB44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJB44H11G Applications
There are a lot of ON Semiconductor
MJB44H11G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJB44H11G More Descriptions
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
Trans GP BJT NPN 80V 10A 2000mW Automotive 3-Pin(2 Tab) D2PAK Tube
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
MJB Series 80 V 10 A Surface Mount NPN Complementary Power Transistor - D2PAK-3
Power Transistor, Npn, 80V, D2-Pak; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:50W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:50Mhzrohs Compliant: Yes |Onsemi MJB44H11G.
D 2 PAK for Surface Mount . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
Trans GP BJT NPN 80V 10A 2000mW Automotive 3-Pin(2 Tab) D2PAK Tube
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
MJB Series 80 V 10 A Surface Mount NPN Complementary Power Transistor - D2PAK-3
Power Transistor, Npn, 80V, D2-Pak; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:50W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:50Mhzrohs Compliant: Yes |Onsemi MJB44H11G.
D 2 PAK for Surface Mount . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
The three parts on the right have similar specifications to MJB44H11G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreeMountMax FrequencyMax Breakdown VoltageContinuous Collector CurrentHTS CodeReach Compliance CodeQualification StatusPower - MaxFrequency - TransitionView Compare
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MJB44H11GACTIVE (Last Updated: 4 days ago)2 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYES3SILICON-55°C~150°C TJTube2005e3yesActive1 (Unlimited)2EAR99Tin (Sn)Other Transistors80V50WGULL WING26010A50MHz40MJB44H113R-PSSO-G21Single2WCOLLECTORSWITCHING50MHzNPNNPN80V10A40 @ 4A 1V10μA1V @ 400mA, 8A80V50MHz1V5V5V60No SVHCNoROHS3 CompliantLead Free----------
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-3-150°C TJCut Tape (CT)---Obsolete1 (Unlimited)-EAR99-Other Transistors-50W-----MJB44--1Single50W---NPNNPN80V10A40 @ 4A 1V10μA1V @ 400mA, 8A80V---5V60-NoROHS3 CompliantLead FreeSurface Mount50MHz80V10A-----
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OBSOLETE (Last Updated: 4 days ago)-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYES3SILICON-55°C~150°C TJTube2009e0noObsolete1 (Unlimited)2EAR99Tin/Lead (Sn80Pb20)Other Transistors-80V2WGULL WING240-10A-30MJB45H113R-PSSO-G21Single-COLLECTORSWITCHING50MHzPNPPNP1V10A40 @ 4A 1V10μA1V @ 400mA, 8A80V40MHz1V5V5V60--Non-RoHS CompliantContains Lead----8541.29.00.75not_compliantNot Qualified2W40MHz
-
OBSOLETE (Last Updated: 4 days ago)-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYES3SILICON-65°C~150°C TJTube2005e0noObsolete1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)Other Transistors100V2WGULL WING2406A-30MJB413R-PSSO-G21Single-COLLECTORSWITCHING3MHzNPNNPN1.5V6A15 @ 3A 4V700μA1.5V @ 600mA, 6A100V3MHz1.5V100V5V30--Non-RoHS CompliantContains Lead----8541.29.00.95not_compliantNot Qualified--
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