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MJ11016G

ON Semiconductor MJ11016G

Part Number:
MJ11016G
Manufacturer:
ON Semiconductor
Ventron No:
2463298-MJ11016G
Description:
TRANS NPN DARL 120V 30A TO3
ECAD Model:
Datasheet:
MJ11016G

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Specifications
ON Semiconductor MJ11016G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJ11016G.
  • Lifecycle Status
    ACTIVE (Last Updated: 11 hours ago)
  • Factory Lead Time
    2 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-204AA, TO-3
  • Surface Mount
    NO
  • Number of Pins
    2
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~200°C TJ
  • Packaging
    Tray
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    120V
  • Max Power Dissipation
    200W
  • Terminal Position
    BOTTOM
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    30A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    2
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    200W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Transistor Type
    NPN - Darlington
  • Collector Emitter Voltage (VCEO)
    120V
  • Max Collector Current
    30A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 20A 5V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 300mA, 30A
  • Collector Emitter Breakdown Voltage
    120V
  • Transition Frequency
    4MHz
  • Collector Emitter Saturation Voltage
    3V
  • Frequency - Transition
    4MHz
  • Collector Base Voltage (VCBO)
    120V
  • Emitter Base Voltage (VEBO)
    5V
  • Continuous Collector Current
    30A
  • Height
    8.51mm
  • Length
    39.37mm
  • Width
    26.67mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJ11016G Overview
This device has a DC current gain of 1000 @ 20A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 3V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 30A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 30A.In this part, there is a transition frequency of 4MHz.The maximum collector current is 30A volts.

MJ11016G Features
the DC current gain for this device is 1000 @ 20A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 4V @ 300mA, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 4MHz


MJ11016G Applications
There are a lot of ON Semiconductor
MJ11016G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJ11016G More Descriptions
30 A, 120 V NPN Darlington Bipolar Power Transistor
Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
ON Semi NPN Darlington Transistor 30 A 120 V HFE:200 3-Pin TO-204 | ON Semiconductor MJ11016G
MJ Series 120 V 30 A NPN High Current Darlington Silicon Transistor TO-204AA
DARLINGTON TRANSISTOR, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 120V; Transition Frequency ft: -; Power Dissipation Pd: 200W; DC Collector Current: 30A; DC Current Gain hFE: 1000hFE; Transistor Case
Bipolar Transistor, Npn, 120V, To-204; Transistor Polarity:Npn; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:120V Rohs Compliant: Yes |Onsemi MJ11016G.
Product Comparison
The three parts on the right have similar specifications to MJ11016G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Series
    hFE Min
    Terminal Finish
    View Compare
  • MJ11016G
    MJ11016G
    ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    2 Weeks
    Tin
    Through Hole
    TO-204AA, TO-3
    NO
    2
    4.535924g
    SILICON
    -55°C~200°C TJ
    Tray
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    120V
    200W
    BOTTOM
    PIN/PEG
    260
    30A
    40
    2
    1
    NPN
    Single
    200W
    COLLECTOR
    AMPLIFIER
    NPN - Darlington
    120V
    30A
    1000 @ 20A 5V
    1mA
    4V @ 300mA, 30A
    120V
    4MHz
    3V
    4MHz
    120V
    5V
    30A
    8.51mm
    39.37mm
    26.67mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • CP547-MJ11015-CT
    CP547-MJ11015-CT
    Central Semiconductor Corp
    -
    -
    -
    Surface Mount
    Die
    -
    -
    -
    -
    -
    Tray
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    Die
    CP547
    -
    -
    MJ11016G vs CP547-MJ11015-CT
  • MJ11015G
    MJ11015G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    2 Weeks
    Tin
    Through Hole
    TO-204AA, TO-3
    NO
    2
    4.535924g
    SILICON
    -55°C~200°C TJ
    Tray
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    -120V
    200W
    BOTTOM
    PIN/PEG
    260
    -30A
    40
    2
    1
    PNP
    Single
    200W
    COLLECTOR
    AMPLIFIER
    PNP - Darlington
    120V
    30A
    1000 @ 20A 5V
    1mA
    4V @ 300mA, 30A
    120V
    4MHz
    3V
    4MHz
    120V
    5V
    30A
    8.51mm
    39.37mm
    26.67mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    1000
    -
    MJ11016G vs MJ11015G
  • MJ11032G
    MJ11032G
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Copper, Silver, Tin
    Through Hole
    TO-204AE
    NO
    2
    -
    SILICON
    -55°C~200°C TJ
    Tray
    2002
    e1
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    120V
    300W
    BOTTOM
    PIN/PEG
    260
    50A
    40
    2
    1
    NPN
    Single
    300W
    COLLECTOR
    AMPLIFIER
    NPN - Darlington
    120V
    50A
    1000 @ 25A 5V
    2mA
    3.5V @ 500mA, 50A
    120V
    -
    2.5V
    -
    120V
    5V
    50A
    8.51mm
    38.86mm
    26.67mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    1000
    Tin/Silver/Copper (Sn/Ag/Cu)
    MJ11016G vs MJ11032G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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