Microsemi Corporation JANTX2N5038
- Part Number:
- JANTX2N5038
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2470818-JANTX2N5038
- Description:
- TRANS NPN 90V 20A TO-3
- ECAD Model:
-
- Datasheet:
- JANTX2N5038
Microsemi Corporation JANTX2N5038 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N5038.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/439
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation140W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation140W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)90V
- Max Collector Current20A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 2A 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1V @ 1.2A, 12A
- Transition Frequency60MHz
- Collector Base Voltage (VCBO)150V
- Emitter Base Voltage (VEBO)7V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N5038 Overview
This device has a DC current gain of 50 @ 2A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 1.2A, 12A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 60MHz.A maximum collector current of 20A volts is possible.
JANTX2N5038 Features
the DC current gain for this device is 50 @ 2A 5V
the vce saturation(Max) is 1V @ 1.2A, 12A
the emitter base voltage is kept at 7V
a transition frequency of 60MHz
JANTX2N5038 Applications
There are a lot of Microsemi Corporation
JANTX2N5038 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 50 @ 2A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 1.2A, 12A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 60MHz.A maximum collector current of 20A volts is possible.
JANTX2N5038 Features
the DC current gain for this device is 50 @ 2A 5V
the vce saturation(Max) is 1V @ 1.2A, 12A
the emitter base voltage is kept at 7V
a transition frequency of 60MHz
JANTX2N5038 Applications
There are a lot of Microsemi Corporation
JANTX2N5038 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N5038 More Descriptions
90 V 20 A 140 W NPN Through Hole Bipolar (BJT) Transistor - TO-3 (TO-204AA)
Trans GP BJT NPN 90V 20A 140000mW 3-Pin(2 Tab) TO-3 Tray
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTX2N5038
Trans GP BJT NPN 90V 20A 140000mW 3-Pin(2 Tab) TO-3 Tray
Power Bjt To-3 Rohs Compliant: Yes |Microchip JANTX2N5038
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