Microsemi Corporation JAN2N5666

Name: JAN2N5666
Brand: Microsemi Corporation
SKU: 2466234-JAN2N5666
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JAN2N5666

Manufacturer:: Microsemi Corporation

Ventron No:: 2466234-JAN2N5666

Description:: TRANS NPN 200V 5A TO5

ECAD Model:

Datasheet:: 2N5664-65,66(S,U3),67(S)

Specifications

Microsemi Corporation JAN2N5666 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N5666.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
22 Weeks
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/455
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1.2W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1.2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
1V @ 5A, 1A
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
6V
RoHS Status
Non-RoHS Compliant

Description

JAN2N5666 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5A, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Collector current can be as low as 5A volts at its maximum.

JAN2N5666 Features
the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V

JAN2N5666 Applications
There are a lot of Microsemi Corporation
JAN2N5666 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JAN2N5666 More Descriptions

Non-Compliant Through Hole NPN Bulk TO-5 3 Lead, Tin Production (Last Updated: 1 month ago)
Trans GP BJT NPN 200V 5A 3-Pin TO-5
Power Bjt To-5 Rohs Compliant: Yes |Microchip JAN2N5666

Product Comparison

The three parts on the right have similar specifications to JAN2N5666.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation

Case Connection

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

RoHS Status

HTS Code

Subcategory

Power - Max

Transition Frequency

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Radiation Hardening

Max Operating Temperature

Min Operating Temperature

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Supplier Device Package

View Compare
JAN2N5666

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

22 Weeks

Lead, Tin

Through Hole

Through Hole

TO-205AA, TO-5-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/455

2007

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

1.2W

BOTTOM

PIN/PEG

NOT SPECIFIED

not_compliant

NOT SPECIFIED

2

O-MBFM-P2

Qualified

1

SINGLE

1.2W

COLLECTOR

SWITCHING

NPN

NPN

200V

5A

40 @ 1A 5V

200nA

1V @ 5A, 1A

250V

6V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-
JAN2N3500

Microsemi Corporation

-

23 Weeks

-

Through Hole

Through Hole

TO-205AD, TO-39-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/366

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

1W

BOTTOM

WIRE

-

-

-

2

-

Qualified

1

SINGLE

-

COLLECTOR

SWITCHING

NPN

NPN

150V

300mA

40 @ 150mA 10V

10μA ICBO

400mV @ 15mA, 150mA

150V

-

Non-RoHS Compliant

8541.29.00.95

Other Transistors

1W

150MHz

1150ns

115ns

No

-

-

-

-

-

-

JAN2N5666 vs JAN2N3500
JAN2N2222AUA

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

23 Weeks

-

Surface Mount

Surface Mount

4-SMD

4

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

2007

-

-

Discontinued

1 (Unlimited)

-

-

-

500mW

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NPN

1V

800mA

100 @ 150mA 10V

50nA

1V @ 50mA, 500mA

75V

-

Non-RoHS Compliant

-

-

500mW

-

-

-

No

200°C

-65°C

50V

50V

800mA

-

JAN2N5666 vs JAN2N2222AUA
JAN2N2221A

Microsemi Corporation

-

18 Weeks

-

Through Hole

Through Hole

TO-206AA, TO-18-3 Metal Can

3

-

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/255

2007

-

-

Active

1 (Unlimited)

-

-

-

500mW

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NPN

50V

800mA

40 @ 150mA 10V

50nA

1V @ 50mA, 500mA

75V

-

Non-RoHS Compliant

-

-

500mW

-

-

-

No

200°C

-65°C

-

50V

800mA

TO-18 (TO-206AA)

JAN2N5666 vs JAN2N2221A