Microsemi Corporation JAN2N5664

Name: JAN2N5664
Brand: Microsemi Corporation
SKU: 2466369-JAN2N5664
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JAN2N5664

Manufacturer:: Microsemi Corporation

Ventron No:: 2466369-JAN2N5664

Description:: TRANS NPN 200V 5A TO66

ECAD Model:

Datasheet:: 2N5664-65,66(S,U3),67(S)

Specifications

Microsemi Corporation JAN2N5664 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N5664.

Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Factory Lead Time
22 Weeks
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/455
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
2.5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2.5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
1V @ 5A, 1A
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
6V
RoHS Status
Non-RoHS Compliant

Description

JAN2N5664 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 1A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 5A volts.

JAN2N5664 Features
the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V

JAN2N5664 Applications
There are a lot of Microsemi Corporation
JAN2N5664 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

JAN2N5664 More Descriptions

Trans GP BJT NPN 200V 5A 3-Pin(2 Tab) TO-66
Non-Compliant Through Hole NPN Bulk TO-66 Lead, Tin Production (Last Updated: 1 month ago) 2.5 W
Power Bjt To-66 Rohs Compliant: Yes |Microchip JAN2N5664

Product Comparison

The three parts on the right have similar specifications to JAN2N5664.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation

Case Connection

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

RoHS Status

Number of Pins

HTS Code

Subcategory

Reference Standard

Power - Max

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Turn On Time-Max (ton)

Radiation Hardening

Surface Mount

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Power Dissipation-Max (Abs)

Turn Off Time-Max (toff)

View Compare
JAN2N5664

Microsemi Corporation

IN PRODUCTION (Last Updated: 4 weeks ago)

22 Weeks

Lead, Tin

Through Hole

Through Hole

TO-213AA, TO-66-2

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/455

2007

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

2.5W

BOTTOM

PIN/PEG

NOT SPECIFIED

not_compliant

NOT SPECIFIED

2

O-MBFM-P2

Qualified

1

SINGLE

2.5W

COLLECTOR

SWITCHING

NPN

NPN

200V

5A

40 @ 1A 5V

200nA

1V @ 5A, 1A

250V

6V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
JAN2N2907AL

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

18 Weeks

-

Surface Mount, Through Hole

Surface Mount

4-SMD, No Lead

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/291

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

500mW

BOTTOM

WIRE

-

-

-

3

-

Qualified

1

SINGLE

-

COLLECTOR

SWITCHING

PNP

PNP

1.6V

600mA

100 @ 150mA 10V

50nA

1.6V @ 50mA, 500mA

60V

-

Non-RoHS Compliant

3

8541.21.00.95

Other Transistors

MIL-19500/291

500mW

TO-206AA

60V

45ns

No

-

-

-

-

-

-

JAN2N5664 vs JAN2N2907AL
JAN2N4237

Microsemi Corporation

-

22 Weeks

-

-

Through Hole

TO-205AD, TO-39-3 Metal Can

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/581

2002

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

-

BOTTOM

WIRE

NOT SPECIFIED

-

NOT SPECIFIED

-

O-MBCY-W3

Qualified

1

SINGLE

-

-

-

NPN

NPN

-

-

30 @ 250mA 1V

100nA ICBO

600mV @ 100mA, 1A

-

-

Non-RoHS Compliant

-

8541.29.00.95

Other Transistors

MIL-19500/581

1W

-

-

-

-

NO

40V

1A

1MHz

0.8W

-

JAN2N5664 vs JAN2N4237
JAN2N3500

Microsemi Corporation

-

23 Weeks

-

Through Hole

Through Hole

TO-205AD, TO-39-3 Metal Can

SILICON

-65°C~200°C TJ

Bulk

Military, MIL-PRF-19500/366

2007

e0

no

Active

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

1W

BOTTOM

WIRE

-

-

-

2

-

Qualified

1

SINGLE

-

COLLECTOR

SWITCHING

NPN

NPN

150V

300mA

40 @ 150mA 10V

10μA ICBO

400mV @ 15mA, 150mA

150V

-

Non-RoHS Compliant

3

8541.29.00.95

Other Transistors

-

1W

-

-

115ns

No

-

-

-

150MHz

-

1150ns

JAN2N5664 vs JAN2N3500