Microsemi Corporation JAN2N3442
- Part Number:
- JAN2N3442
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2470583-JAN2N3442
- Description:
- TRANS NPN 140V 10A TO-3
- Datasheet:
- JAN2N3442
Microsemi Corporation JAN2N3442 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N3442.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time22 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/370
- Published2002
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.95
- SubcategoryOther Transistors
- Max Power Dissipation6W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- Reference StandardMIL
- JESD-30 CodeO-MBFM-P2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)140V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 3A 4V
- Vce Saturation (Max) @ Ib, Ic1V @ 300mA, 3A
- Current - Collector (Ic) (Max)10A
- Transition Frequency0.08MHz
- Collector Base Voltage (VCBO)160V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JAN2N3442 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 3A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 300mA, 3A.Parts of this part have transition frequencies of 0.08MHz.During maximum operation, collector current can be as low as 10A volts.
JAN2N3442 Features
the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 1V @ 300mA, 3A
a transition frequency of 0.08MHz
JAN2N3442 Applications
There are a lot of Microsemi Corporation
JAN2N3442 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 3A 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 300mA, 3A.Parts of this part have transition frequencies of 0.08MHz.During maximum operation, collector current can be as low as 10A volts.
JAN2N3442 Features
the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 1V @ 300mA, 3A
a transition frequency of 0.08MHz
JAN2N3442 Applications
There are a lot of Microsemi Corporation
JAN2N3442 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JAN2N3442 More Descriptions
Non-Compliant Through Hole Bulk 3 Production (Last Updated: 1 month ago) No 10 A 6 W
Trans GP BJT NPN 140V 10A 3-Pin(2 Tab) TO-3
Power Bjt To-3 Rohs Compliant: Yes |Microchip JAN2N3442
Trans GP BJT NPN 140V 10A 3-Pin(2 Tab) TO-3
Power Bjt To-3 Rohs Compliant: Yes |Microchip JAN2N3442
The three parts on the right have similar specifications to JAN2N3442.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationTerminal PositionTerminal FormPin CountReference StandardJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCurrent - Collector (Ic) (Max)Transition FrequencyCollector Base Voltage (VCBO)Radiation HardeningRoHS StatusPower DissipationTransistor ApplicationEmitter Base Voltage (VEBO)Turn Off Time-Max (toff)Turn On Time-Max (ton)Supplier Device PackageMax Operating TemperatureMin Operating TemperaturePower - MaxCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)View Compare
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JAN2N3442IN PRODUCTION (Last Updated: 3 weeks ago)22 WeeksThrough HoleThrough HoleTO-204AA, TO-33SILICON-55°C~200°C TJBulkMilitary, MIL-PRF-19500/3702002e0noActive1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)8541.29.00.95Other Transistors6WBOTTOMPIN/PEG2MILO-MBFM-P2Qualified1SINGLECOLLECTORNPNNPN140V10A20 @ 3A 4V1V @ 300mA, 3A10A0.08MHz160VNoNon-RoHS Compliant-------------
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IN PRODUCTION (Last Updated: 1 month ago)22 WeeksThrough HoleThrough HoleTO-205AA, TO-5-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3492007e0-Active1 (Unlimited)3EAR99TIN LEAD-Other Transistors1WBOTTOMWIRE3--Qualified1SINGLECOLLECTORNPNNPN50V3A30 @ 1.5A 2V1.5V @ 250mA, 2.5A--80VNoNon-RoHS Compliant1WSWITCHING5V90ns45ns-------
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IN PRODUCTION (Last Updated: 1 month ago)22 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3SILICON-65°C~200°C TJBulkMilitary, MIL-PRF-19500/3492007e0-Active1 (Unlimited)3EAR99TIN LEAD-Other Transistors1WBOTTOMWIRE3--Qualified1SINGLECOLLECTORNPNNPN40V3A40 @ 1.5A 2V1.5V @ 250mA, 2.5A--60VNoNon-RoHS Compliant1WSWITCHING5V90ns45ns-------
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IN PRODUCTION (Last Updated: 1 month ago)23 WeeksThrough HoleThrough HoleTO-206AB, TO-46-3 Metal Can3--65°C~200°C TJBulkMilitary, MIL-PRF-19500/3912007--Discontinued1 (Unlimited)-----500mW----------NPN500mV1A50 @ 500mA 10V500mV @ 50mA, 500mA1A-140VNoNon-RoHS Compliant-----TO-46-3200°C-65°C500mW10nA80V80V
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