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IXTM24N50 More Descriptions
Trans MOSFET N-CH Si 500V 24A 3-Pin(2 Tab) TO-204AE
Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN
MOSFET, N, TO-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 300W; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Alternate Case Style: TO-204AA; Current Id Max: 24A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance Max: 230mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 96A; Voltage Vds Typ: 500V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN
MOSFET, N, TO-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 300W; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Alternate Case Style: TO-204AA; Current Id Max: 24A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance Max: 230mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 96A; Voltage Vds Typ: 500V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
The three parts on the right have similar specifications to IXTM24N50.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusFactory Lead TimePublishedPbfree CodePower DissipationDrain-source On Resistance-MaxRadiation HardeningSurface MountSeriesView Compare
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IXTM24N50------------------------------------------------- -
Through HoleThrough HoleTO-204AA, TO-33SILICON-55°C~150°C TJTubeObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED2O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.4 Ω @ 2.5A, 10V4.5V @ 250μA2600pF @ 25V5A Tc130nC @ 10V1000V10V±20V5A20V5A20A1000VROHS3 Compliant--------
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Through HoleThrough HoleTO-204AA, TO-33SILICON-55°C~150°C TJTubeObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEG--2O-MBFM-P2-1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2 Ω @ 2.5A, 10V4.5V @ 250μA2600pF @ 25V5A Tc130nC @ 10V1000V10V±20V5A20V5A20A-ROHS3 Compliant35 Weeks2000yes180W2OhmNo--
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-Through HoleTO-204AA, TO-3-SILICON-55°C~150°C TJTubeObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED-O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING950m Ω @ 5.5A, 10V4.5V @ 250μA4500pF @ 25V11A Tc170nC @ 10V800V10V±20V--11A44A800VROHS3 Compliant-2012yes-0.95Ohm-NOGigaMOS™
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