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FZT951TA

Diodes Incorporated FZT951TA

Part Number:
FZT951TA
Manufacturer:
Diodes Incorporated
Ventron No:
3585310-FZT951TA
Description:
TRANS PNP 60V 5A SOT-223
ECAD Model:
Datasheet:
FZT951TA

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Specifications
Diodes Incorporated FZT951TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT951TA.
  • Factory Lead Time
    15 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2006
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Voltage - Rated DC
    -60V
  • Max Power Dissipation
    3W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -5A
  • Frequency
    120MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    FZT951
  • JESD-30 Code
    R-PDSO-G4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    3W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    120MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 2A 1V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    460mV @ 500mA, 5A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    120MHz
  • Collector Emitter Saturation Voltage
    460mV
  • Max Breakdown Voltage
    60V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    100
  • Height
    1.65mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FZT951TA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 460mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 460mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).120MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.

FZT951TA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 460mV
the vce saturation(Max) is 460mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 120MHz


FZT951TA Applications
There are a lot of Diodes Incorporated
FZT951TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
FZT951TA More Descriptions
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
60V 3W 100@2A,1V 5A PNP SOT-223 Bipolar Transistors - BJT ROHS
FZT951 Series PNP 5 A 60 V SMT Silicon High Performance Transistor - SOT-223
Trans GP BJT PNP 60V 5A 3000mW 4-Pin(3 Tab) SOT-223 T/R
PNP transistor, SOT223,FZT951 5A | Diodes Inc FZT951TA
TRANSISTOR, PNP, REEL 1K; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:60V; Current Ic Continuous a Max:6A; Voltage, Vce Sat Max:50mV; Power Dissipation:3W; Min Hfe:100; ft, Typ:120MHz; ;RoHS Compliant: Yes
TRANSISTOR, PNP, REEL 1K; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 120MHz; Power Dissipation Pd: 3W; DC Collector Current: 6A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 50mV; Continuous Collector Current Ic Max: 6A; Current Ic Continuous a Max: 6A; Current Ic hFE: 2A; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 120MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 3W; Pulsed Current Icm: 20A; Reel Quantity: 1000; SMD Marking: FZT951; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vcbo: 150V
Product Comparison
The three parts on the right have similar specifications to FZT951TA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Pbfree Code
    Terminal Finish
    Subcategory
    Continuous Collector Current
    View Compare
  • FZT951TA
    FZT951TA
    Diodes Incorporated
    15 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2006
    e3
    Active
    1 (Unlimited)
    4
    SMD/SMT
    EAR99
    -60V
    3W
    DUAL
    GULL WING
    260
    -5A
    120MHz
    40
    FZT951
    R-PDSO-G4
    1
    Single
    3W
    COLLECTOR
    SWITCHING
    120MHz
    PNP
    PNP
    60V
    5A
    100 @ 2A 1V
    50nA ICBO
    460mV @ 500mA, 5A
    60V
    120MHz
    460mV
    60V
    100V
    6V
    100
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • FZT968TA
    FZT968TA
    Diodes Incorporated
    15 Weeks
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2006
    e3
    Active
    1 (Unlimited)
    4
    -
    EAR99
    -12V
    3W
    DUAL
    GULL WING
    260
    -6A
    80MHz
    40
    FZT968
    -
    1
    Single
    3W
    COLLECTOR
    SWITCHING
    80MHz
    PNP
    PNP
    12V
    6A
    300 @ 500mA 1V
    10nA ICBO
    450mV @ 250mA, 6A
    12V
    80MHz
    -360mV
    12V
    15V
    -6V
    -
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    no
    Matte Tin (Sn)
    Other Transistors
    -6A
    FZT951TA vs FZT968TA
  • FZT951TC
    FZT951TC
    Diodes Incorporated
    15 Weeks
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    Active
    1 (Unlimited)
    4
    -
    EAR99
    -60V
    3W
    DUAL
    GULL WING
    260
    -5A
    120MHz
    40
    FZT951
    -
    1
    Single
    3W
    COLLECTOR
    SWITCHING
    120MHz
    PNP
    PNP
    60V
    5A
    100 @ 2A 1V
    50nA ICBO
    460mV @ 500mA, 5A
    60V
    120MHz
    -370mV
    -
    100V
    -7V
    -
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    no
    Matte Tin (Sn)
    -
    -
    FZT951TA vs FZT951TC
  • FZT948TA
    FZT948TA
    Diodes Incorporated
    15 Weeks
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2000
    e3
    Active
    1 (Unlimited)
    4
    -
    EAR99
    -20V
    3W
    DUAL
    GULL WING
    260
    -6A
    80MHz
    40
    FZT948
    -
    1
    Single
    3W
    COLLECTOR
    SWITCHING
    80MHz
    PNP
    PNP
    20V
    6A
    100 @ 1A 1V
    50nA ICBO
    450mV @ 250mA, 6A
    20V
    80MHz
    450mV
    20V
    40V
    6V
    -
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    no
    Matte Tin (Sn)
    -
    -6A
    FZT951TA vs FZT948TA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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