Diodes Incorporated FZT653TC
- Part Number:
- FZT653TC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2466544-FZT653TC
- Description:
- TRANS NPN 100V 2A SOT223
- Datasheet:
- FZT653TC
Diodes Incorporated FZT653TC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT653TC.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC100V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating2A
- Frequency175MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberFZT653
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product175MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency175MHz
- Collector Emitter Saturation Voltage230mV
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current2A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT653TC Overview
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 230mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.Single BJT transistor is essential to maintain the continuous collector voltage at 2A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.As a result, the part has a transition frequency of 175MHz.In extreme cases, the collector current can be as low as 2A volts.
FZT653TC Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 175MHz
FZT653TC Applications
There are a lot of Diodes Incorporated
FZT653TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 230mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.Single BJT transistor is essential to maintain the continuous collector voltage at 2A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.As a result, the part has a transition frequency of 175MHz.In extreme cases, the collector current can be as low as 2A volts.
FZT653TC Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 175MHz
FZT653TC Applications
There are a lot of Diodes Incorporated
FZT653TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT653TC More Descriptions
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT NPN 100V 2A 2000mW 4-Pin(3 Tab) SOT-223 T/R
Pwr Mid Perf Transistor SOT223 T&R 4K
Telecom Transformer 1:2CT/1CT:2 40Term. Gull Wing SMD
Trans GP BJT NPN 100V 2A 2000mW 4-Pin(3 Tab) SOT-223 T/R
Pwr Mid Perf Transistor SOT223 T&R 4K
Telecom Transformer 1:2CT/1CT:2 40Term. Gull Wing SMD
The three parts on the right have similar specifications to FZT653TC.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeConfigurationFrequency - TransitionContact PlatingMax Breakdown VoltageTerminationAdditional FeatureSubcategoryJESD-30 CodehFE MinView Compare
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FZT653TC15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)100V2WDUALGULL WING2602A175MHz30FZT6531Single3WCOLLECTORSWITCHING175MHzNPNNPN100V2A100 @ 500mA 2V100nA ICBO500mV @ 200mA, 2A100V175MHz230mV120V5V2A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free----------
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)180V2WDUALGULL WING260500mA-40FZT6961--COLLECTORSWITCHING-NPNNPN180V500mA150 @ 200mA 5V100nA ICBO250mV @ 5mA, 200mA180V70MHz200mV180V5V500mA1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeSINGLE70MHz-------
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-Surface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99-300V2WDUALGULL WING260500mA30MHz40FZT6571Single2WCOLLECTORSWITCHING30MHzNPNNPN300V500mA50 @ 100mA 5V100nA ICBO500mV @ 10mA, 100mA300V30MHz500mV300V5V500mA1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--Tin300V-----
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13 WeeksSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99-70V2WDUALGULL WING2601A-40FZT6921Single2WCOLLECTORSWITCHING150MHzNPNNPN70V2A150 @ 1A 2V100nA500mV @ 200mA, 2A70V150MHz500mV70V5V2A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--Tin70VSMD/SMTHIGH RELIABILITYOther TransistorsR-PDSO-G4400
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