Diodes Incorporated FZT653TA

Name: FZT653TA
Brand: Diodes Incorporated
SKU: 2462916-FZT653TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FZT653TA

Manufacturer:: Diodes Incorporated

Ventron No:: 2462916-FZT653TA

Description:: TRANS NPN 100V 2A SOT-223

ECAD Model:

Datasheet:: FZT653TA

Part Pictures

Specifications

Diodes Incorporated FZT653TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT653TA.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2013
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Frequency
175MHz
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
FZT653
Number of Elements
1
Voltage
100V
Element Configuration
Single
Current
2A
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
175MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
175MHz
Collector Emitter Saturation Voltage
230mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
2A
Height
1.65mm
Length
6.7mm
Width
3.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FZT653TA Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 230mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 175MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.

FZT653TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 175MHz

FZT653TA Applications
There are a lot of Diodes Incorporated
FZT653TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

FZT653TA More Descriptions

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
100V 2W 100@500mA,2V 2A NPN SOT-223 Bipolar Transistors - BJT ROHS
FZT653 Series NPN 2 A 100 V SMT Silicon High Performance Transistor - SOT-223
Trans GP BJT NPN 100V 2A 2000mW 4-Pin(3 Tab) SOT-223 T/R
SMT NPN transistor, FZT653 2A Ic 2Vce | Diodes Inc FZT653TA
NPN TRANSISTOR 100V 2A 2WSOT223
Transistor, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:175MHz; Power Dissipation Pd:2W;
Bipolar Transistor, Npn, 100V; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:175Mhz Rohs Compliant: Yes |Diodes Inc. FZT653TA
TRANSISTOR, NPN, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 175MHz; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 300mV; Continuous Collector Current Ic Max: 2A; Current Ic Continuous a Max: 2A; Current Ic hFE: 500mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 140MHz; Gain Bandwidth ft Typ: 175MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 2W; Pulsed Current Icm: 6A; SMD Marking: FZT653; Voltage Vcbo: 120V

Product Comparison

The three parts on the right have similar specifications to FZT653TA.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Number of Elements

Voltage

Element Configuration

Current

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Reach Compliance Code

Reference Standard

Configuration

Power - Max

Frequency - Transition

Contact Plating

Termination

JESD-30 Code

hFE Min

View Compare
FZT653TA

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

7.994566mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2013

e3

no

Active

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

Other Transistors

100V

2W

DUAL

GULL WING

260

2A

175MHz

30

FZT653

1

100V

Single

2A

2W

COLLECTOR

SWITCHING

175MHz

NPN

NPN

100V

2A

100 @ 500mA 2V

100nA ICBO

500mV @ 200mA, 2A

100V

175MHz

230mV

100V

120V

5V

2A

1.65mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
FZT651QTA

Diodes Incorporated

13 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1997

e3

no

Active

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

Other Transistors

-

3W

DUAL

GULL WING

260

-

-

40

-

1

-

-

-

-

COLLECTOR

-

-

NPN

NPN

600mV

3A

100 @ 500mA 2V

100nA ICBO

600mV @ 300mA, 3A

60V

175MHz

-

60V

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

HIGH RELIABILITY

not_compliant

AEC-Q101

SINGLE

3W

175MHz

-

-

-

-

FZT653TA vs FZT651QTA
FZT696BTC

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

no

Active

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

-

180V

2W

DUAL

GULL WING

260

500mA

-

40

FZT696

1

-

-

-

-

COLLECTOR

SWITCHING

-

NPN

NPN

180V

500mA

150 @ 200mA 5V

100nA ICBO

250mV @ 5mA, 200mA

180V

70MHz

200mV

-

180V

5V

500mA

1.65mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

SINGLE

-

70MHz

-

-

-

-

FZT653TA vs FZT696BTC
FZT692BTA

Diodes Incorporated

13 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

no

Active

1 (Unlimited)

4

EAR99

-

Other Transistors

70V

2W

DUAL

GULL WING

260

1A

-

40

FZT692

1

-

Single

-

2W

COLLECTOR

SWITCHING

150MHz

NPN

NPN

70V

2A

150 @ 1A 2V

100nA

500mV @ 200mA, 2A

70V

150MHz

500mV

70V

70V

5V

2A

1.65mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

HIGH RELIABILITY

-

-

-

-

-

Tin

SMD/SMT

R-PDSO-G4

400

FZT653TA vs FZT692BTA

Certification

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FZT653TA Specification

Part Number	Manufacturers	Description	Stock	Price
FZT653TA DISTI #	Zetex / Diodes Inc	Trans GP BJT NPN 100V 2A Automotive 4-Pin(3 Tab) S RoHS: Compliant	3	1 $0.6359 10 $0.5291 25 $0.5284 50 $0.5276 100 $0.3496 250 $0.3493 500 $0.3387 1000 $0.2773 3000 $0.26 6000 $0.2444 15000 $0.2378 30000 $0.2263 75000 $0.2036
FZT653TA DISTI #	Diodes Incorporated	TRANS NPN 100V 2A SOT-223 RoHS: Compliant	0	1000 $0.3528 2000 $0.3231 5000 $0.3033 10000 $0.2934
FZT653TA DISTI #	Diodes Incorporated	TRANS NPN 100V 2A SOT-223 RoHS: Compliant	0	1 $0.8 10 $0.71 100 $0.5531 500 $0.44496
FZT653TA DISTI #	Diodes Incorporated	TRANS NPN 100V 2A SOT-223 RoHS: Compliant	0	1 $0.8 10 $0.71 100 $0.5531 500 $0.44496
FZT653TA DISTI #	Diodes Incorporated	Trans GP BJT NPN 100V 2A 4-Pin(3 Tab) SOT-223 T/R RoHS: Not Compliant	0	1000 $0.2259 2000 $0.2149 4000 $0.2049 6000 $0.1949 10000 $0.1909
FZT653TA DISTI #	Diodes Incorporated	Trans GP BJT NPN 100V 2A 4-Pin(3 Tab) SOT-223 T/R RoHS: Compliant	0	1000 $0.2469 2000 $0.2459 4000 $0.2449 6000 $0.2439 10000 $0.2439
FZT653TA DISTI #	Diodes Incorporated	Trans GP BJT NPN 100V 2A 4-Pin(3 Tab) SOT-223 T/R RoHS: Not Compliant	0	1 $0.6169 10 $0.5419 25 $0.5409 50 $0.4769 125 $0.3499 250 $0.3499 500 $0.3489
FZT653TA DISTI #	Diodes Incorporated	SMT NPN transistor, FZT653 2A Ic 2Vce RoHS: Compliant	0	25 $0.73 100 $0.64 250 $0.58 500 $0.53
FZT653TA DISTI #	Diodes Incorporated	Bipolar Transistors - BJT NPN Medium Power RoHS: Compliant	1	1 $0.68 10 $0.558 100 $0.36 1000 $0.288
FZT653TA DISTI #	Zetex / Diodes Inc	SMT NPN TRANSISTOR FZT653 2A IC 2VCE, PK	165	5 $0.528 50 $0.362 100 $0.32 250 $0.26 500 $0.228
FZT653TA DISTI #	Zetex / Diodes Inc		13
FZT653TA DISTI #	Diodes Incorporated		909
FZT653TA DISTI #	Zetex / Diodes Inc		1260
FZT653TA DISTI #	Zetex / Diodes Inc	Bipolar Junction Transistor, NPN Type, SOT-223	570	1 $1.4 72 $0.7 287 $0.56
FZT653TA DISTI #	Zetex / Diodes Inc	Bipolar Junction Transistor, NPN Type, SOT-223	40	1 $2 4 $1.6 14 $1
FZT653TA DISTI #	Zetex / Diodes Inc	Bipolar Junction Transistor, NPN Type, SOT-223	22	1 $2.25 3 $1.8 12 $1.125
FZT653TA DISTI #	Diodes Incorporated	NPN TRANSISTOR 100V 2A 2WSOT223	0	1000 $0.4337 2000 $0.4033 3000 $0.3838 4000 $0.3469 6000 $0.3187
FZT653TA DISTI #	Zetex / Diodes Inc	RoHS: Not Compliant	500
FZT653TA DISTI #	Zetex / Diodes Inc	INSTOCK	9031
FZT653TA DISTI #	Zetex / Diodes Inc	INSTOCK	1061

FZT653T~~(3)~~
FZT653~~(4)~~
FZT65~~(15)~~
FZT6~~(50)~~
FZT~~(60)~~

Diodes Incorporated FZT653TA

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