Diodes Incorporated FZT591TA

FZT591TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The emitter base voltage can be kept at -7V for high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

FZT591TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -7V
the current rating of this device is -1A
a transition frequency of 150MHz


FZT591TA Applications
There are a lot of Diodes Incorporated
FZT591TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting