Diodes Incorporated FZT560TA
- Part Number:
- FZT560TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2465233-FZT560TA
- Description:
- TRANS PNP 500V 0.15A SOT223
- ECAD Model:
-
- Datasheet:
- FZT560TA
Diodes Incorporated FZT560TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT560TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency60MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT560
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product60MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 50mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 50mA
- Collector Emitter Breakdown Voltage500V
- Transition Frequency60MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage500V
- Collector Base Voltage (VCBO)500V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-150mA
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT560TA Overview
This device has a DC current gain of 80 @ 50mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 10mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -150mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 60MHz.A breakdown input voltage of 500V volts can be used.A maximum collector current of 150mA volts is possible.
FZT560TA Features
the DC current gain for this device is 80 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
FZT560TA Applications
There are a lot of Diodes Incorporated
FZT560TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 80 @ 50mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 10mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -150mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 60MHz.A breakdown input voltage of 500V volts can be used.A maximum collector current of 150mA volts is possible.
FZT560TA Features
the DC current gain for this device is 80 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
FZT560TA Applications
There are a lot of Diodes Incorporated
FZT560TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT560TA More Descriptions
FZT560 Series PNP 0.15 A 500 V SMT Silicon High Voltage Transistor - SOT-223
Trans GP BJT PNP 500V 0.15A 2000mW 4-Pin(3 Tab) SOT-223 T/R
Transistor, PNP,0.5A,500V, SOT223 | Diodes Inc FZT560TA
Transistor, PNP, 500V, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-500V; Transition Frequency ft:60MHz; Power Dissipation
TRANSISTOR, PNP, 500V, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -500V; Transition Frequency ft: 60MHz; Power Dissipation Pd: 2W; DC Collector Current: 50mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 60MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device
Trans GP BJT PNP 500V 0.15A 2000mW 4-Pin(3 Tab) SOT-223 T/R
Transistor, PNP,0.5A,500V, SOT223 | Diodes Inc FZT560TA
Transistor, PNP, 500V, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-500V; Transition Frequency ft:60MHz; Power Dissipation
TRANSISTOR, PNP, 500V, SOT-223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -500V; Transition Frequency ft: 60MHz; Power Dissipation Pd: 2W; DC Collector Current: 50mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 60MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device
The three parts on the right have similar specifications to FZT560TA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Rated DCCurrent RatingCurrent - Collector (Ic) (Max)SubcategoryTransistor ApplicationContact PlatingView Compare
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FZT560TA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)2WDUALGULL WING26060MHz40FZT5604R-PDSO-G41Single2WCOLLECTOR60MHzPNPPNP500V150mA80 @ 50mA 10V100nA500mV @ 10mA, 50mA500V60MHz-500mV500V500V5V-150mA1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free------- -
-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mg--55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---2W-----FZT549------100MHz-PNP750mV1A100 @ 500mA 2V100nA750mV @ 200mA, 2A30V--750mV--35V-5V-1A---No SVHC-RoHS CompliantLead Free-30V-1A1A---
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)2WDUALGULL WING260150MHz40FZT591--1Single2WCOLLECTOR150MHzPNPPNP60V1A100 @ 500mA 5V100nA600mV @ 100mA, 1A60V150MHz-600mV60V80V-7V-1A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-60V-1A-Other TransistorsSWITCHING-
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99-2WDUALGULL WING260100MHz40FZT549--1Single2WCOLLECTOR100MHzPNPPNP30V1A100 @ 500mA 2V100nA750mV @ 200mA, 2A30V100MHz-750mV30V35V5V-1A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-30V-1A--SWITCHINGTin
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