Diodes Incorporated FZT491TA
- Part Number:
- FZT491TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845061-FZT491TA
- Description:
- TRANS NPN 60V 1A SOT-223
- Datasheet:
- FZT491TA
Diodes Incorporated FZT491TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT491TA.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Current Rating1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberFZT491
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage160mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current1A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT491TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 160mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
FZT491TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FZT491TA Applications
There are a lot of Diodes Incorporated
FZT491TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 160mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
FZT491TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FZT491TA Applications
There are a lot of Diodes Incorporated
FZT491TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT491TA More Descriptions
FZT491 Series NPN 1 A 60 V SMT Silicon Medium Power Transistor - SOT-223
Trans GP BJT NPN 60V 1A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans GP BJT NPN 60V 1A 4PinSOT223 | Diodes Inc FZT491TA
Trans, Npn, 60V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. FZT491TA
Trans GP BJT NPN 60V 1A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans GP BJT NPN 60V 1A 4PinSOT223 | Diodes Inc FZT491TA
Trans, Npn, 60V, 1A, 150Deg C, 2W Rohs Compliant: Yes |Diodes Inc. FZT491TA
The three parts on the right have similar specifications to FZT491TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthRoHS StatusLead FreeHTS CodePin CountJESD-30 CodeConfigurationREACH SVHChFE MinRadiation HardeningView Compare
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FZT491TA13 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors60V2WDUALGULL WING260not_compliant1A150MHz30FZT491Not Qualified1Single3WCOLLECTORSWITCHING150MHzNPNNPN60V1A100 @ 500mA 5V100nA500mV @ 100mA, 1A60V150MHz160mV60V80V5V1A1.65mm6.7mm3.7mmROHS3 CompliantLead Free--------
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-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)4EAR99MATTE TIN-40V2WDUALGULL WING260-1A-40FZT491ANot Qualified1--COLLECTOR-150MHzNPNNPN500mV1A300 @ 500mA 5V100nA500mV @ 100mA, 1A40V150MHz160mV-40V5V1A---RoHS CompliantLead Free8541.29.00.754R-PDSO-G4SINGLENo SVHC--
-
-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4EAR99MATTE TIN-60V2WDUALGULL WING260unknown1A-40FZT491Not Qualified1--COLLECTORSWITCHING150MHzNPNNPN500mV1A100 @ 500mA 5V100nA500mV @ 100mA, 1A60V150MHz160mV-80V5V1A---RoHS CompliantLead Free8541.29.00.75-R-PDSO-G4SINGLE-100-
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors30V2WDUALGULL WING260-1A150MHz40FZT489-1Single2WCOLLECTOR-150MHzNPNNPN30V1A100 @ 1A 2V100nA600mV @ 200mA, 2A30V150MHz600mV30V50V5V-1.65mm6.7mm3.7mmROHS3 CompliantLead Free----No SVHC-No
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