Diodes Incorporated FZT489TA
- Part Number:
- FZT489TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464625-FZT489TA
- Description:
- TRANS NPN 30V 1A SOT223
- Datasheet:
- FZT489TA
Diodes Incorporated FZT489TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT489TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT489
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic600mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT489TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1A volts.
FZT489TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FZT489TA Applications
There are a lot of Diodes Incorporated
FZT489TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1A volts.
FZT489TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FZT489TA Applications
There are a lot of Diodes Incorporated
FZT489TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT489TA More Descriptions
Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
FZT489 Series NPN 1 A 30 V Silicon Planar Medium Power Transistor - SOT-223
Trans GP BJT NPN 30V 1A 3000mW 4-Pin(3 Tab) SOT-223 T/R
FZT489 Series NPN 1 A 30 V Silicon Planar Medium Power Transistor - SOT-223
Trans GP BJT NPN 30V 1A 3000mW 4-Pin(3 Tab) SOT-223 T/R
The three parts on the right have similar specifications to FZT489TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodeQualification StatusTransistor ApplicationContinuous Collector CurrentHTS CodeJESD-30 CodeConfigurationhFE MinView Compare
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FZT489TA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors30V2WDUALGULL WING2601A150MHz40FZT4891Single2WCOLLECTOR150MHzNPNNPN30V1A100 @ 1A 2V100nA600mV @ 200mA, 2A30V150MHz600mV30V50V5V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free---------
-
13 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors60V2WDUALGULL WING2601A150MHz30FZT4911Single3WCOLLECTOR150MHzNPNNPN60V1A100 @ 500mA 5V100nA500mV @ 100mA, 1A60V150MHz160mV60V80V5V1.65mm6.7mm3.7mm--ROHS3 CompliantLead Freenot_compliantNot QualifiedSWITCHING1A----
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-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)4EAR99MATTE TIN-100V2WDUALGULL WING2601A-40FZT4931Single-COLLECTOR150MHzNPNNPN600mV1A100 @ 250mA 10V100nA600mV @ 100mA, 1A100V150MHz600mV-120V5V1.65mm6.7mm3.7mmNo SVHC-RoHS CompliantLead Free-Not QualifiedSWITCHING1A8541.21.00.95R-PDSO-G4--
-
-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4EAR99MATTE TIN-60V2WDUALGULL WING2601A-40FZT4911--COLLECTOR150MHzNPNNPN500mV1A100 @ 500mA 5V100nA500mV @ 100mA, 1A60V150MHz160mV-80V5V-----RoHS CompliantLead FreeunknownNot QualifiedSWITCHING1A8541.29.00.75R-PDSO-G4SINGLE100
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