Diodes Incorporated FZT458TC
- Part Number:
- FZT458TC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2468577-FZT458TC
- Description:
- TRANS NPN 400V 0.3A SOT223
- Datasheet:
- FZT458TC
Diodes Incorporated FZT458TC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT458TC.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- HTS Code8541.29.00.75
- Voltage - Rated DC400V
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating300mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT458
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 6mA, 50mA
- Collector Emitter Breakdown Voltage400V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)400V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current300mA
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FZT458TC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 50mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 6mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 300mA.A transition frequency of 50MHz is present in the part.Collector current can be as low as 300mA volts at its maximum.
FZT458TC Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz
FZT458TC Applications
There are a lot of Diodes Incorporated
FZT458TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 50mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 6mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 300mA.A transition frequency of 50MHz is present in the part.Collector current can be as low as 300mA volts at its maximum.
FZT458TC Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz
FZT458TC Applications
There are a lot of Diodes Incorporated
FZT458TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT458TC More Descriptions
Power Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
TRANS NPN 400V 0.3A SOT223
TRANS NPN 400V 0.3A SOT223
The three parts on the right have similar specifications to FZT458TC.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentREACH SVHCRoHS StatusLead FreePin CountFactory Lead TimeNumber of PinsPublishedPbfree CodeSubcategoryFrequencyElement ConfigurationPower DissipationMax Breakdown VoltageHeightLengthWidthRadiation HardeningView Compare
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FZT458TCSurface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4EAR99MATTE TIN8541.29.00.75400V2WDUALGULL WING260unknown300mA40FZT458R-PDSO-G4Not Qualified1SINGLECOLLECTORSWITCHING50MHzNPNNPN500mV300mA100 @ 50mA 10V100nA500mV @ 6mA, 50mA400V50MHz500mV400V5V300mANo SVHCRoHS CompliantLead Free---------------
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Surface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)4EAR99MATTE TIN8541.29.00.7540V2WDUALGULL WING260-1A40FZT491AR-PDSO-G4Not Qualified1SINGLECOLLECTOR-150MHzNPNNPN500mV1A300 @ 500mA 5V100nA500mV @ 100mA, 1A40V150MHz160mV40V5V1ANo SVHCRoHS CompliantLead Free4-------------
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Surface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJCut Tape (CT)e3Active1 (Unlimited)4EAR99Matte Tin (Sn)-30V2WDUALGULL WING260-1A40FZT489--1-COLLECTOR-150MHzNPNNPN30V1A100 @ 1A 2V100nA600mV @ 200mA, 2A30V150MHz600mV50V5V-No SVHCROHS3 CompliantLead Free-15 Weeks42006noOther Transistors150MHzSingle2W30V1.65mm6.7mm3.7mmNo
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Surface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJCut Tape (CT)e3Active1 (Unlimited)4EAR99Matte Tin (Sn)-40V2WDUALGULL WING260-1A40FZT491A--1-COLLECTOR-150MHzNPNNPN40V1A300 @ 500mA 5V100nA500mV @ 100mA, 1A40V150MHz500mV40V7V1ANo SVHCROHS3 CompliantLead Free413 Weeks42012noOther Transistors150MHzSingle3W40V1.65mm6.7mm3.7mmNo
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