Fairchild/ON Semiconductor FSB749

FSB749 Overview
This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 25V volts.The maximum collector current is 3A volts.

FSB749 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz


FSB749 Applications
There are a lot of ON Semiconductor
FSB749 applications of single BJT transistors.


Inverter
Interface
Driver
Muting