Fairchild/ON Semiconductor FJX2907ATF
- Part Number:
- FJX2907ATF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463828-FJX2907ATF
- Description:
- TRANS PNP 60V 0.6A SOT-323
- Datasheet:
- FJX2907A
Fairchild/ON Semiconductor FJX2907ATF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJX2907ATF.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation325mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-600mA
- Frequency200MHz
- Base Part NumberFJX2907
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation325mW
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-1.6V
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Turn On Time-Max (ton)45ns
- Height900μm
- Length2mm
- Width1.25mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FJX2907ATF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is -1.6V, which allows for maximum design flexibility.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
FJX2907ATF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
FJX2907ATF Applications
There are a lot of ON Semiconductor
FJX2907ATF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is -1.6V, which allows for maximum design flexibility.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
FJX2907ATF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
FJX2907ATF Applications
There are a lot of ON Semiconductor
FJX2907ATF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FJX2907ATF More Descriptions
Bipolar Transistors - BJT PNP Epitaxial Transistor
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 60V 0.6A 3-Pin SOT-323 T/R - Tape and Reel
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 60V 0.6A 3-Pin SOT-323 T/R - Tape and Reel
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