FJX2907ATF

Fairchild/ON Semiconductor FJX2907ATF

Part Number:
FJX2907ATF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2463828-FJX2907ATF
Description:
TRANS PNP 60V 0.6A SOT-323
ECAD Model:
Datasheet:
FJX2907A

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Specifications
Fairchild/ON Semiconductor FJX2907ATF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJX2907ATF.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Max Power Dissipation
    325mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -600mA
  • Frequency
    200MHz
  • Base Part Number
    FJX2907
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    325mW
  • Gain Bandwidth Product
    200MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    200MHz
  • Collector Emitter Saturation Voltage
    -1.6V
  • Max Breakdown Voltage
    60V
  • Collector Base Voltage (VCBO)
    -60V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    100
  • Turn On Time-Max (ton)
    45ns
  • Height
    900μm
  • Length
    2mm
  • Width
    1.25mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
FJX2907ATF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is -1.6V, which allows for maximum design flexibility.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.

FJX2907ATF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz


FJX2907ATF Applications
There are a lot of ON Semiconductor
FJX2907ATF applications of single BJT transistors.


Inverter
Interface
Driver
Muting
FJX2907ATF More Descriptions
Bipolar Transistors - BJT PNP Epitaxial Transistor
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 60V 0.6A 3-Pin SOT-323 T/R - Tape and Reel
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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