Fairchild/ON Semiconductor FJPF3305H2TU
- Part Number:
- FJPF3305H2TU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845858-FJPF3305H2TU
- Description:
- TRANS NPN 400V 4A TO-220F
- Datasheet:
- FJPF3305H2TU
Fairchild/ON Semiconductor FJPF3305H2TU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJPF3305H2TU.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Voltage - Rated DC400V
- Max Power Dissipation30W
- Current Rating4A
- Frequency4MHz
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation30W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product4MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce26 @ 1A 5V
- Current - Collector Cutoff (Max)1μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1V @ 1A, 4A
- Collector Emitter Breakdown Voltage400V
- Collector Base Voltage (VCBO)700V
- Emitter Base Voltage (VEBO)9V
- hFE Min8
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FJPF3305H2TU Overview
DC current gain in this device equals 26 @ 1A 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 1A, 4A.An emitter's base voltage can be kept at 9V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.In extreme cases, the collector current can be as low as 4A volts.
FJPF3305H2TU Features
the DC current gain for this device is 26 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
FJPF3305H2TU Applications
There are a lot of ON Semiconductor
FJPF3305H2TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 26 @ 1A 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 1A, 4A.An emitter's base voltage can be kept at 9V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.In extreme cases, the collector current can be as low as 4A volts.
FJPF3305H2TU Features
the DC current gain for this device is 26 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
FJPF3305H2TU Applications
There are a lot of ON Semiconductor
FJPF3305H2TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FJPF3305H2TU More Descriptions
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 400V 4A 3-Pin(3 Tab) TO-220F T/R - Rail/Tube
1Ã×A 400V 30W 4A 8@2A5V 4MHz 1V@4A1A 150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
FJPF3305 Series 400 V 4 A High Voltage Switch Mode Application - TO-220F
Bipolar Transistors - BJT NPN 7 0V/4A
Trans GP BJT NPN 400V 4A 3-Pin(3 Tab) TO-220F T/R - Rail/Tube
1Ã×A 400V 30W 4A 8@2A5V 4MHz 1V@4A1A 150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
FJPF3305 Series 400 V 4 A High Voltage Switch Mode Application - TO-220F
Bipolar Transistors - BJT NPN 7 0V/4A
The three parts on the right have similar specifications to FJPF3305H2TU.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Surface MountTerminal PositionPin CountJESD-30 CodeQualification StatusConfigurationTransition FrequencyFrequency - TransitionAdditional FeatureSubcategoryBase Part NumberCollector Emitter Saturation VoltageView Compare
-
FJPF3305H2TUACTIVE (Last Updated: 2 days ago)4 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON150°C TJTube2004e3yesActive1 (Unlimited)3EAR99Tin (Sn)400V30W4A4MHz1Single30WISOLATEDSWITCHING4MHzNPNNPN400V4A26 @ 1A 5V1μA ICBOTO-220AB1V @ 1A, 4A400V700V9V8NoROHS3 CompliantLead Free----------------
-
---Through HoleTO-220-3 Full Pack---150°C TJTube---Obsolete1 (Unlimited)--------------NPN--20 @ 800mA 3V--1.5V @ 1A, 3.5A-------40W400V5A------------
-
---Through HoleTO-220-3 Full Pack--SILICON150°C TJTube---Obsolete1 (Unlimited)3------1--ISOLATEDSWITCHING-NPNNPN--26 @ 2A 5V-TO-220AB3V @ 2A, 8A-----ROHS3 Compliant-40W400V8ANOSINGLE3R-PSFM-T3COMMERCIALSINGLE4MHz4MHz----
-
ACTIVE (Last Updated: 2 days ago)2 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON150°C TJTube2003e3yesActive1 (Unlimited)3EAR99Tin (Sn)800V40W3A15MHz1Single40WISOLATEDSWITCHING15MHzNPNNPN800V3A15 @ 200mA 5V10μA ICBOTO-220AB2V @ 300mA, 1.5A800V1.1kV7V10NoROHS3 CompliantLead Free---------15MHz-HIGH RELIABILITYOther TransistorsFJPF50272V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
16 January 2024
PDIUSBD12 Structure, Pin Configuration, Characteristics and Applications
Ⅰ. Overview of PDIUSBD12Ⅱ. Design of PDIUSBD12Ⅲ. Internal structure of PDIUSBD12Ⅳ. Pin configuration of PDIUSBD12Ⅴ. What are the characteristics of PDIUSBD12?Ⅵ. PDIUSBD12 instructionsⅦ. What are the applications of... -
17 January 2024
MCF5282CVM66 Microcontroller Replacements, Structure, Working Principle and Other Details
Ⅰ. MCF5282CVM66 overviewⅡ. Structure and working principle of MCF5282CVM66Ⅲ. Specifications of MCF5282CVM66Ⅳ. What are the advantages and disadvantages of MCF5282CVM66?Ⅴ. Purpose of MCF5282CVM66Ⅵ. Market trend of MCF5282CVM66Ⅶ. Precautions... -
17 January 2024
DS18B20 Digital Temperature Sensor Structure, Features, Applications and More
Ⅰ. What is DS18B20?Ⅱ. Internal structure of DS18B20Ⅲ. Features of DS18B20 sensorⅣ. How does DS18B20 work?Ⅴ. Symbol, footprint and pin configuration of DS18B20Ⅵ. Driving principle of DS18B20Ⅶ. Where... -
18 January 2024
What is the BTN8982TA Bridge and How Does it Work?
Ⅰ. Introduction to BTN8982TAⅡ. Block diagram of BTN8982TAⅢ. Specifications of BTN8982TAⅣ. Working principle of BTN8982TAⅤ. BTN8982TA symbol, footprint and pin configurationⅥ. Features of BTN8982TAⅦ. Application fields of BTN8982TABTN8982TA...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.