Fairchild/ON Semiconductor FJPF5027OTU
- Part Number:
- FJPF5027OTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845948-FJPF5027OTU
- Description:
- TRANS NPN 800V 3A TO-220F
- Datasheet:
- FJPF5027OTU
Fairchild/ON Semiconductor FJPF5027OTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJPF5027OTU.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC800V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating3A
- Frequency15MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberFJPF5027
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation40W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product15MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)800V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 200mA 5V
- Current - Collector Cutoff (Max)10μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2V @ 300mA, 1.5A
- Collector Emitter Breakdown Voltage800V
- Transition Frequency15MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)1.1kV
- Emitter Base Voltage (VEBO)7V
- hFE Min10
- Height15.87mm
- Length10.16mm
- Width4.7mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FJPF5027OTU Overview
In this device, the DC current gain is 20 @ 200mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 300mA, 1.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).15MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
FJPF5027OTU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJPF5027OTU Applications
There are a lot of ON Semiconductor
FJPF5027OTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 20 @ 200mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 300mA, 1.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).15MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
FJPF5027OTU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJPF5027OTU Applications
There are a lot of ON Semiconductor
FJPF5027OTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FJPF5027OTU More Descriptions
FJPF Series NPN 40 W 800 V 3 A Flange Mount Power Transistor - TO-220F
Trans GP BJT NPN 800V 3A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Silicon Trans
10Ã×A 800V 40W 3A 10@200mA5V 15MHz NPN 2V@1.5A300mA 150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
Trans, Npn, 800V, 3A, 150Deg C, 40W Rohs Compliant: Yes |Onsemi FJPF5027OTU
Trans GP BJT NPN 800V 3A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Silicon Trans
10Ã×A 800V 40W 3A 10@200mA5V 15MHz NPN 2V@1.5A300mA 150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
Trans, Npn, 800V, 3A, 150Deg C, 40W Rohs Compliant: Yes |Onsemi FJPF5027OTU
The three parts on the right have similar specifications to FJPF5027OTU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRoHS StatusLead FreeSurface MountTerminal PositionJESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionAdditional FeatureRadiation HardeningView Compare
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FJPF5027OTUACTIVE (Last Updated: 2 days ago)14 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON150°C TJTube2003e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors800V40WNOT SPECIFIEDnot_compliant3A15MHzNOT SPECIFIEDFJPF5027Not Qualified1Single40WISOLATEDSWITCHING15MHzNPNNPN800V3A20 @ 200mA 5V10μA ICBOTO-220AB2V @ 300mA, 1.5A800V15MHz2V1.1kV7V1015.87mm10.16mm4.7mmROHS3 CompliantLead Free-----------
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---Through HoleTO-220-3 Full Pack--SILICON-50°C~150°C TJTube---Obsolete1 (Unlimited)3-----NOT SPECIFIEDcompliant--NOT SPECIFIED--1--ISOLATEDAMPLIFIER-NPNNPN--55 @ 1A 5V5μA ICBOTO-220AB3V @ 800mA, 8A-30MHz-------RoHS Compliant-NOSINGLER-PSFM-T3SINGLE50W250V17A30MHz--
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---Through HoleTO-220-3 Full Pack---150°C TJTube---Obsolete1 (Unlimited)--------------------NPN--20 @ 800mA 3V--1.5V @ 1A, 3.5A---------------40W400V5A---
-
ACTIVE (Last Updated: 2 days ago)2 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON150°C TJTube2003e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors800V40W--3A15MHz-FJPF5027-1Single40WISOLATEDSWITCHING15MHzNPNNPN800V3A15 @ 200mA 5V10μA ICBOTO-220AB2V @ 300mA, 1.5A800V15MHz2V1.1kV7V10---ROHS3 CompliantLead Free--------HIGH RELIABILITYNo
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