FJPF5027OTU

Fairchild/ON Semiconductor FJPF5027OTU

Part Number:
FJPF5027OTU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2845948-FJPF5027OTU
Description:
TRANS NPN 800V 3A TO-220F
ECAD Model:
Datasheet:
FJPF5027OTU

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Specifications
Fairchild/ON Semiconductor FJPF5027OTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FJPF5027OTU.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    2.27g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    800V
  • Max Power Dissipation
    40W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    3A
  • Frequency
    15MHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    FJPF5027
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    40W
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    15MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    800V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 200mA 5V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    2V @ 300mA, 1.5A
  • Collector Emitter Breakdown Voltage
    800V
  • Transition Frequency
    15MHz
  • Collector Emitter Saturation Voltage
    2V
  • Collector Base Voltage (VCBO)
    1.1kV
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    10
  • Height
    15.87mm
  • Length
    10.16mm
  • Width
    4.7mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FJPF5027OTU Overview
In this device, the DC current gain is 20 @ 200mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 300mA, 1.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).15MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

FJPF5027OTU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz


FJPF5027OTU Applications
There are a lot of ON Semiconductor
FJPF5027OTU applications of single BJT transistors.


Inverter
Interface
Driver
Muting
FJPF5027OTU More Descriptions
FJPF Series NPN 40 W 800 V 3 A Flange Mount Power Transistor - TO-220F
Trans GP BJT NPN 800V 3A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Silicon Trans
10Ã×A 800V 40W 3A 10@200mA5V 15MHz NPN 2V@1.5A300mA 150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
Trans, Npn, 800V, 3A, 150Deg C, 40W Rohs Compliant: Yes |Onsemi FJPF5027OTU
Product Comparison
The three parts on the right have similar specifications to FJPF5027OTU.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    JESD-30 Code
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Additional Feature
    Radiation Hardening
    View Compare
  • FJPF5027OTU
    FJPF5027OTU
    ACTIVE (Last Updated: 2 days ago)
    14 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    150°C TJ
    Tube
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    800V
    40W
    NOT SPECIFIED
    not_compliant
    3A
    15MHz
    NOT SPECIFIED
    FJPF5027
    Not Qualified
    1
    Single
    40W
    ISOLATED
    SWITCHING
    15MHz
    NPN
    NPN
    800V
    3A
    20 @ 200mA 5V
    10μA ICBO
    TO-220AB
    2V @ 300mA, 1.5A
    800V
    15MHz
    2V
    1.1kV
    7V
    10
    15.87mm
    10.16mm
    4.7mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FJPF5200RTU
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    SILICON
    -50°C~150°C TJ
    Tube
    -
    -
    -
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    -
    -
    NOT SPECIFIED
    compliant
    -
    -
    NOT SPECIFIED
    -
    -
    1
    -
    -
    ISOLATED
    AMPLIFIER
    -
    NPN
    NPN
    -
    -
    55 @ 1A 5V
    5μA ICBO
    TO-220AB
    3V @ 800mA, 8A
    -
    30MHz
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    NO
    SINGLE
    R-PSFM-T3
    SINGLE
    50W
    250V
    17A
    30MHz
    -
    -
  • FJPF5555TU
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    150°C TJ
    Tube
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    -
    -
    20 @ 800mA 3V
    -
    -
    1.5V @ 1A, 3.5A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    40W
    400V
    5A
    -
    -
    -
  • FJPF5027RTU
    ACTIVE (Last Updated: 2 days ago)
    2 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    150°C TJ
    Tube
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    800V
    40W
    -
    -
    3A
    15MHz
    -
    FJPF5027
    -
    1
    Single
    40W
    ISOLATED
    SWITCHING
    15MHz
    NPN
    NPN
    800V
    3A
    15 @ 200mA 5V
    10μA ICBO
    TO-220AB
    2V @ 300mA, 1.5A
    800V
    15MHz
    2V
    1.1kV
    7V
    10
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    HIGH RELIABILITY
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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