Fairchild/ON Semiconductor FJPF2145TU

Trans GP BJT NPN 800V 5A 40000mW 3-Pin(3 Tab) TO-220F Rail
5.0 A, 800 V ESBC Rated NPN Power Bipolar Junction Transistor
Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN ESBC/5A/800V TO-220F
800V 40W 5A 20@200mA5V 15MHz NPN 159mV@1.5A300mA -55¡Í~ 125¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
TRANS, NPN, 800V, 5A, 125DEG C, 40W; Available until stocks are exhausted
The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance whenused in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignitionswitches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJPF2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-220F package.