Fairchild/ON Semiconductor FDS9958

Name: FDS9958
Brand: Fairchild/ON Semiconductor
SKU: 2473275-FDS9958
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS9958

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473275-FDS9958

Description:: MOSFET 2P-CH 60V 2.9A 8-SO

ECAD Model:

Datasheet:: FDS9958

Specifications

Fairchild/ON Semiconductor FDS9958 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS9958.

Lifecycle Status
ACTIVE (Last Updated: 6 hours ago)
Factory Lead Time
11 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
105MOhm
Subcategory
Other Transistors
Max Power Dissipation
900mW
Terminal Form
GULL WING
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
6 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
105m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1020pF @ 30V
Current - Continuous Drain (Id) @ 25°C
2.9A
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Rise Time
3ns
Drain to Source Voltage (Vdss)
60V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
-2.9A
Threshold Voltage
-1.6V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Feedback Cap-Max (Crss)
65 pF
Height
1.575mm
Length
4.9mm
Width
3.9mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS9958 Description
The MOSFET specified by these P-channel logic levels are produced using an advanced PowerTritch process that is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for portable electronic applications: load switching and power management, battery charging and protection circuits.
FDS9958 Features
Max rDS(on) = 105 mΩ at VGS = -10 V, ID = -2.9 A Max rDS(on) = 135 mΩ at VGS = -4.5 V, ID = -2.5 A RoHS compliant
FDS9958 Applications
This product is general usage and suitable for many different applications. Load Switch Power Management

FDS9958 More Descriptions

Transistor MOSFET Array Dual P-CH 60V 2.9A 8-Pin SOIC T/R - Tape and Reel
Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ
MOSFET, DUAL P-CH, -60V, -2.9A, SOIC-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -2.9A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.082ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Volta
These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

Product Comparison

The three parts on the right have similar specifications to FDS9958.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Max Power Dissipation

Terminal Form

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Rated DC

Current Rating

Terminal Finish

Power - Max

Pulsed Drain Current-Max (IDM)

Nominal Vgs

View Compare
FDS9958

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 hours ago)

11 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e3

yes

Active

1 (Unlimited)

8

EAR99

105MOhm

Other Transistors

900mW

GULL WING

2

Dual

ENHANCEMENT MODE

2W

6 ns

2 P-Channel (Dual)

SWITCHING

105m Ω @ 2.9A, 10V

3V @ 250μA

1020pF @ 30V

2.9A

23nC @ 10V

3ns

60V

6 ns

27 ns

-2.9A

-1.6V

20V

-60V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

65 pF

1.575mm

4.9mm

3.9mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
FDS9933

Fairchild/ON Semiconductor

-

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

900mW

-

2

Dual

-

2W

-

2 P-Channel (Dual)

-

55m Ω @ 3.2A, 4.5V

1.2V @ 250μA

825pF @ 10V

-

20nC @ 4.5V

46ns

20V

25 ns

40 ns

5A

-

12V

-20V

-

Logic Level Gate

-

-

-

-

-

-

RoHS Compliant

Lead Free

-20V

-5A

-

-

-

-

FDS9958 vs FDS9933
FDS9933A

Fairchild/ON Semiconductor

-

-

-

-

-

SOP-8

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

FDS9958 vs FDS9933A
FDS9953A

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

10 Weeks

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

230.4mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2001

e3

yes

Active

1 (Unlimited)

8

EAR99

130MOhm

Other Transistors

2W

GULL WING

2

Dual

ENHANCEMENT MODE

2W

4.5 ns

2 P-Channel (Dual)

SWITCHING

130m Ω @ 1A, 10V

3V @ 250μA

185pF @ 15V

2.9A

3.5nC @ 10V

13ns

30V

2 ns

11 ns

2.9mA

-1.8V

25V

-30V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-30V

-2.9A

Tin (Sn)

900mW

10A

1.8 V

FDS9958 vs FDS9953A