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FDS9933BZ

Fairchild/ON Semiconductor FDS9933BZ

Part Number:
FDS9933BZ
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2474220-FDS9933BZ
Description:
MOSFET 2P-CH 20V 4.9A 8-SOIC
ECAD Model:
Datasheet:
FDS9933BZ

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Specifications
Fairchild/ON Semiconductor FDS9933BZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS9933BZ.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    230.4mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2008
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation
    900mW
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Power Dissipation
    1.6W
  • FET Type
    2 P-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    46m Ω @ 4.9A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    985pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 4.5V
  • Rise Time
    9.3ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    9.3 ns
  • Turn-Off Delay Time
    59 ns
  • Continuous Drain Current (ID)
    4.9A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    20V
  • FET Feature
    Logic Level Gate
  • RoHS Status
    RoHS Compliant
Description
FDS9933BZ   Description     These P-channel 2.5V MOSFET are manufactured using Xiantong Semiconductor's advanced power channel process, which is tailor-made to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for portable electronic applications: load switching and power management, battery charging and protection circuits.   FDS9933BZ    Features
Max rps(on)=46mΩat VG=-4.5V=-4.9A Max rps(on)=69mΩat VGs=-2.5V1=-4.0A Low gate charge(11nC typical). High performance trench technology for extremely low rps(on). HBM ESD protection level>3kV(Note 3)  RoHS Compliant   FDS9933BZ     Applications
 Battery Charging Load Switching  



FDS9933BZ More Descriptions
Trans MOSFET P-CH 20V 4.9A 8-Pin SOIC N T/R
-20V Dual P-Channel 2.5V Specified PowerTrench® MOSFET
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Product Comparison
The three parts on the right have similar specifications to FDS9933BZ.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Power Dissipation
    Number of Elements
    Element Configuration
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Feature
    RoHS Status
    Voltage - Rated DC
    Current Rating
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Terminal Form
    Operating Mode
    Turn On Delay Time
    Power - Max
    Transistor Application
    Current - Continuous Drain (Id) @ 25°C
    Threshold Voltage
    Pulsed Drain Current-Max (IDM)
    FET Technology
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    View Compare
  • FDS9933BZ
    FDS9933BZ
    Fairchild/ON Semiconductor
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    230.4mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2008
    yes
    Obsolete
    1 (Unlimited)
    900mW
    2
    Dual
    1.6W
    2 P-Channel (Dual)
    46m Ω @ 4.9A, 4.5V
    1.5V @ 250μA
    985pF @ 10V
    15nC @ 4.5V
    9.3ns
    20V
    9.3 ns
    59 ns
    4.9A
    12V
    20V
    Logic Level Gate
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS9933
    FDS9933
    Fairchild/ON Semiconductor
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    -
    Obsolete
    1 (Unlimited)
    900mW
    2
    Dual
    2W
    2 P-Channel (Dual)
    55m Ω @ 3.2A, 4.5V
    1.2V @ 250μA
    825pF @ 10V
    20nC @ 4.5V
    46ns
    20V
    25 ns
    40 ns
    5A
    12V
    -20V
    Logic Level Gate
    RoHS Compliant
    -20V
    -5A
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDS9933BZ vs FDS9933
  • FDS9933A
    FDS9933A
    Fairchild/ON Semiconductor
    -
    -
    SOP-8
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDS9933BZ vs FDS9933A
  • FDS9953A
    FDS9953A
    Fairchild/ON Semiconductor
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    230.4mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    yes
    Active
    1 (Unlimited)
    2W
    2
    Dual
    2W
    2 P-Channel (Dual)
    130m Ω @ 1A, 10V
    3V @ 250μA
    185pF @ 15V
    3.5nC @ 10V
    13ns
    30V
    2 ns
    11 ns
    2.9mA
    25V
    -30V
    Logic Level Gate
    ROHS3 Compliant
    -30V
    -2.9A
    Lead Free
    ACTIVE (Last Updated: 1 week ago)
    10 Weeks
    SILICON
    e3
    8
    EAR99
    130MOhm
    Tin (Sn)
    Other Transistors
    GULL WING
    ENHANCEMENT MODE
    4.5 ns
    900mW
    SWITCHING
    2.9A
    -1.8V
    10A
    METAL-OXIDE SEMICONDUCTOR
    1.8 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    FDS9933BZ vs FDS9953A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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