Fairchild/ON Semiconductor FDS9933
- Part Number:
- FDS9933
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848458-FDS9933
- Description:
- MOSFET 2P-CH 20V 5A 8SOIC
- Datasheet:
- FDS9933
Fairchild/ON Semiconductor FDS9933 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS9933.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight187mg
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-20V
- Max Power Dissipation900mW
- Current Rating-5A
- Number of Elements2
- Element ConfigurationDual
- Power Dissipation2W
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs55m Ω @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds825pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
- Rise Time46ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)5A
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- FET FeatureLogic Level Gate
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDS9933 Description
This P-Channel MOSFET is made using Fairchild Semiconductor's cutting-edge PowerTrench technology, which has a tough gate version. It has been designed with a wide range of gate drive voltage (2.5V - 12V) in mind for power management applications.
FDS9933 Features
VGSS range extension (12V) for battery applications
Low entrance fee
Extremely low RDS with high performance trench technology (ON)
Capability to handle high power and current
FDS9933 Applications
loading switch
Drive by motor
Conversion of DC to DC
Power administration
This P-Channel MOSFET is made using Fairchild Semiconductor's cutting-edge PowerTrench technology, which has a tough gate version. It has been designed with a wide range of gate drive voltage (2.5V - 12V) in mind for power management applications.
FDS9933 Features
VGSS range extension (12V) for battery applications
Low entrance fee
Extremely low RDS with high performance trench technology (ON)
Capability to handle high power and current
FDS9933 Applications
loading switch
Drive by motor
Conversion of DC to DC
Power administration
FDS9933 More Descriptions
Transistor MOSFET Array Dual P-Channel 20V 5A 8-Pin SOIC N T/R - Bulk
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
MOSFETs Dl P-Ch 2.5V Spec PowerTrench
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
MOSFETs Dl P-Ch 2.5V Spec PowerTrench
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
The three parts on the right have similar specifications to FDS9933.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureRoHS StatusLead FreePublishedPbfree CodeVgs(th) (Max) @ Id:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Lifecycle StatusFactory Lead TimeTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTerminal FormOperating ModeTurn On Delay TimePower - MaxTransistor ApplicationCurrent - Continuous Drain (Id) @ 25°CThreshold VoltagePulsed Drain Current-Max (IDM)FET TechnologyNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningView Compare
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FDS9933Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~175°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)-20V900mW-5A2Dual2W2 P-Channel (Dual)55m Ω @ 3.2A, 4.5V1.2V @ 250μA825pF @ 10V20nC @ 4.5V46ns20V25 ns40 ns5A12V-20VLogic Level GateRoHS CompliantLead Free------------------------------------------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8230.4mg-55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)-900mW-2Dual1.6W2 P-Channel (Dual)46m Ω @ 4.9A, 4.5V1.5V @ 250μA985pF @ 10V15nC @ 4.5V9.3ns20V9.3 ns59 ns4.9A12V20VLogic Level GateRoHS Compliant-2008yes---------------------------------------
-
---------------------------------3V @ 250µA8-SOAutomotive, AEC-Q101, PowerTrench®105 mOhm @ 2.9A, 10V900mWOriginal-Reel®8-SOIC (0.154", 3.90mm Width)-55°C ~ 150°C (TJ)Surface Mount1020pF @ 30V23nC @ 10V2 P-Channel (Dual)Logic Level Gate60V2.9A------------------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8230.4mg-55°C~150°C TJTape & Reel (TR)PowerTrench®Active1 (Unlimited)-30V2W-2.9A2Dual2W2 P-Channel (Dual)130m Ω @ 1A, 10V3V @ 250μA185pF @ 15V3.5nC @ 10V13ns30V2 ns11 ns2.9mA25V-30VLogic Level GateROHS3 CompliantLead Free2001yes---------------ACTIVE (Last Updated: 1 week ago)10 WeeksSILICONe38EAR99130MOhmTin (Sn)Other TransistorsGULL WINGENHANCEMENT MODE4.5 ns900mWSWITCHING2.9A-1.8V10AMETAL-OXIDE SEMICONDUCTOR1.8 V1.5mm5mm4mmNo SVHCNo
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