Fairchild/ON Semiconductor FDG6304P

Name: FDG6304P
Brand: Fairchild/ON Semiconductor
SKU: 2473484-FDG6304P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDG6304P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473484-FDG6304P

Description:: MOSFET 2P-CH 25V 0.41A SC70-6

ECAD Model:

Datasheet:: FDG6304P

Specifications

Fairchild/ON Semiconductor FDG6304P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG6304P.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
28mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1999
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
1.1Ohm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
300mW
Terminal Form
GULL WING
Current Rating
-410mA
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
7 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.1 Ω @ 410mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
62pF @ 10V
Current - Continuous Drain (Id) @ 25°C
410mA
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 4.5V
Rise Time
8ns
Drain to Source Voltage (Vdss)
25V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
-410mA
Threshold Voltage
-820mV
Gate to Source Voltage (Vgs)
-8V
Drain Current-Max (Abs) (ID)
0.41A
Drain to Source Breakdown Voltage
-25V
Dual Supply Voltage
-25V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
-820 mV
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDG6304P Description
These dual P-channel logic level enhanced mode field effect transistors are produced using proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. The device is designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET. FDG6304P Features N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 |? @ VGS= 4.5 V, RDS(ON) = 5.0 |? @ VGS= 2.7 V P-Ch -0.41 A,-25V, RDS(ON) = 1.1 |? @ VGS= -4.5V, RDS(ON) = 1.5 |? @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (V GS(th) < 1.5 V) Gate-Source Zener for ESD ruggedness (>6k V Human Body Model).
FDG6304P Applications
This product is general usage and suitable for many different applications.

FDG6304P More Descriptions

Transistor MOSFET Array Dual P-CH 25V 0.41A 6-Pin SC-70 T/R - Tape and Reel
TRANSISTOR, MOSFET; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -410mA; Drain Source Voltage Vds: -25V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -820mV; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -410mA; Current Id Max: -410mA; Drain Source Voltage Vds, P Channel: -25V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 0.85ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -25V; Voltage Vgs Max: -820mV; Voltage Vgs Rds on Measurement: -4.5V
These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.

Product Comparison

The three parts on the right have similar specifications to FDG6304P.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Current Rating

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

FET Technology

FET Feature

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Power - Max

Polarity/Channel Type

Max Junction Temperature (Tj)

Height

View Compare
FDG6304P

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

28mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1999

e3

yes

Active

1 (Unlimited)

6

SMD/SMT

EAR99

1.1Ohm

LOGIC LEVEL COMPATIBLE

Other Transistors

-25V

300mW

GULL WING

-410mA

2

Dual

ENHANCEMENT MODE

300mW

7 ns

2 P-Channel (Dual)

SWITCHING

1.1 Ω @ 410mA, 4.5V

1.5V @ 250μA

62pF @ 10V

410mA

1.5nC @ 4.5V

8ns

25V

8 ns

55 ns

-410mA

-820mV

-8V

0.41A

-25V

-25V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-820 mV

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
FDG6314P

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

-

-

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2 P-Channel (Dual)

-

-

-

-

-

-

-

25V

-

-

-

-

-

-

-

-

-

Standard

-

-

-

-

-

SC-88 (SC-70-6)

-

-

-

-

FDG6304P vs FDG6314P
FDG6322C_D87Z

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N and P-Channel

-

4Ohm @ 220mA, 4.5V

1.5V @ 250μA

9.5pF @ 10V

220mA 410mA

0.4nC @ 4.5V

-

25V

-

-

-

-

-

-

-

-

-

Logic Level Gate

-

-

-

-

-

SC-88 (SC-70-6)

300mW

-

-

-

FDG6304P vs FDG6322C_D87Z
FDG6321C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

28mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2017

e3

yes

Active

1 (Unlimited)

6

-

EAR99

450mOhm

LOGIC LEVEL COMPATIBLE

Other Transistors

-

300mW

GULL WING

500mA

2

Dual

ENHANCEMENT MODE

300mW

-

N and P-Channel

SWITCHING

450m Ω @ 500mA, 4.5V

1.5V @ 250μA

50pF @ 10V

500mA 410mA

2.3nC @ 4.5V

8ns

-

8 ns

55 ns

500mA

800mV

8V

0.5A

25V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

N-CHANNEL AND P-CHANNEL

150°C

1.1mm

FDG6304P vs FDG6321C