Fairchild/ON Semiconductor FDG6335N
- Part Number:
- FDG6335N
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847617-FDG6335N
- Description:
- MOSFET 2N-CH 20V 0.7A SOT-363
- ECAD Model:
-
- Datasheet:
- FDG6335N
Fairchild/ON Semiconductor FDG6335N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG6335N.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight28mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance300MOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC20V
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Current Rating700mA
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time5 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs300m Ω @ 700mA, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds113pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs1.4nC @ 4.5V
- Rise Time7ns
- Fall Time (Typ)7 ns
- Turn-Off Delay Time9 ns
- Continuous Drain Current (ID)700mA
- Threshold Voltage1.1V
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)0.7A
- Drain to Source Breakdown Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Height1.1mm
- Length2mm
- Width1.25mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDG6335N Description
With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Its application in compact switching regulators has been refined, offering very low Rds(on) and gate charge (QG) in a small size.
FDG6335N Features
?Low gate charge (typically 1.1 nC)
?High-performance trenching for incredibly low Rds(on)
?SC70-6 surface mount package, compact industry standard
FDG6335N Applications
Converter for DC/DC
Management of power
?Loadswitch
With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Its application in compact switching regulators has been refined, offering very low Rds(on) and gate charge (QG) in a small size.
FDG6335N Features
?Low gate charge (typically 1.1 nC)
?High-performance trenching for incredibly low Rds(on)
?SC70-6 surface mount package, compact industry standard
FDG6335N Applications
Converter for DC/DC
Management of power
?Loadswitch
FDG6335N More Descriptions
Transistor MOSFET Array Dual N-CH 20V 0.7A 6-Pin SC-70 T/R - Tape and Reel
N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:700mA; Source Voltage Vds:20V; On
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.1V; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:700mA; Source Voltage Vds:20V; On
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.1V; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to FDG6335N.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyMax Junction Temperature (Tj)FET FeatureHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)PublishedAdditional FeaturePolarity/Channel TypeView Compare
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FDG6335NACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface Mount6-TSSOP, SC-88, SOT-363628mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)6EAR99300MOhmFET General Purpose Power20V300mWGULL WING700mA2DualENHANCEMENT MODE300mW5 ns2 N-Channel (Dual)SWITCHING300m Ω @ 700mA, 4.5V1.5V @ 250μA113pF @ 10V1.4nC @ 4.5V7ns7 ns9 ns700mA1.1V12V0.7A20VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate1.1mm2mm1.25mmNo SVHCNoROHS3 CompliantLead Free-------- -
----Surface Mount6-TSSOP, SC-88, SOT-363----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-------------N and P-Channel-4Ohm @ 220mA, 4.5V1.5V @ 250μA9.5pF @ 10V0.4nC @ 4.5V----------Logic Level Gate-------SC-88 (SC-70-6)300mW220mA 410mA25V---
-
----Surface Mount6-TSSOP, SC-88, SOT-363----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-------------N and P-Channel-4Ohm @ 220mA, 4.5V1.5V @ 250μA9.5pF @ 10V0.4nC @ 4.5V----------Logic Level Gate-------SC-88 (SC-70-6)300mW220mA 140mA25V---
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ACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface Mount6-TSSOP, SC-88, SOT-363628mgSILICON-55°C~150°C TJTape & Reel (TR)-e3yesActive1 (Unlimited)6EAR99450mOhmOther Transistors-300mWGULL WING500mA2DualENHANCEMENT MODE300mW-N and P-ChannelSWITCHING450m Ω @ 500mA, 4.5V1.5V @ 250μA50pF @ 10V2.3nC @ 4.5V8ns8 ns55 ns500mA800mV8V0.5A25VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate1.1mm--No SVHCNoROHS3 CompliantLead Free--500mA 410mA-2017LOGIC LEVEL COMPATIBLEN-CHANNEL AND P-CHANNEL
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