Fairchild/ON Semiconductor FDG6332C_F085
- Part Number:
- FDG6332C_F085
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847622-FDG6332C_F085
- Description:
- MOSFET N/P-CH 20V SC70-6
- Datasheet:
- FDG6332C_F085
Fairchild/ON Semiconductor FDG6332C_F085 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG6332C_F085.
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Supplier Device Package:SC-70-6
- Series:Automotive, AEC-Q101, PowerTrench®
- Rds On (Max) @ Id, Vgs:300 mOhm @ 700mA, 4.5V
- Power - Max:300mW
- Packaging:Tape & Reel (TR)
- Package / Case:6-TSSOP, SC-88, SOT-363
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds:113pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 4.5V
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):20V
- Current - Continuous Drain (Id) @ 25°C:700mA, 600mA
part No. FDG6332C_F085 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
FDG6332C_F085 More Descriptions
Dual N & P-Channel 20 V 300 mOhm 1.5 nC PowerTrench Mosfet - SC-70-6
Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N AND P CH, 20V, 700MA, SC-70-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:300mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-70; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N AND P CH, 20V, 700MA, SC-70-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:300mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-70; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
The three parts on the right have similar specifications to FDG6332C_F085.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Mounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)FET FeatureLifecycle StatusFactory Lead TimeMountNumber of PinsWeightTransistor Element MaterialSeriesJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyHeightLengthWidthRadiation HardeningRoHS StatusLead FreeContact PlatingThreshold VoltageDrain Current-Max (Abs) (ID)Max Junction Temperature (Tj)REACH SVHCView Compare
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FDG6332C_F0851.5V @ 250µASC-70-6Automotive, AEC-Q101, PowerTrench®300 mOhm @ 700mA, 4.5V300mWTape & Reel (TR)6-TSSOP, SC-88, SOT-363-55°C ~ 150°C (TJ)Surface Mount113pF @ 10V1.5nC @ 4.5VN and P-ChannelLogic Level Gate20V700mA, 600mA-----------------------------------------------------------
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---------------Surface Mount6-TSSOP, SC-88, SOT-363SC-88 (SC-70-6)-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)300mWN and P-Channel4Ohm @ 220mA, 4.5V1.5V @ 250μA9.5pF @ 10V220mA 140mA0.4nC @ 4.5V25VLogic Level Gate------------------------------------------
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---------------Surface Mount6-TSSOP, SC-88, SOT-363--55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)-2 P-Channel (Dual)400m Ω @ 600mA, 4.5V1.5V @ 250μA153pF @ 10V-2.5nC @ 4.5V20VLogic Level GateACTIVE (Last Updated: 2 days ago)10 WeeksSurface Mount628mgSILICONPowerTrench®e3yes6EAR99400MOhmTin (Sn)Other Transistors-20V300mWGULL WING-600mA2DualENHANCEMENT MODE300mW5 nsSWITCHING15ns15 ns7 ns600mA8V-20VMETAL-OXIDE SEMICONDUCTOR1mm2mm1.25mmNoROHS3 CompliantLead Free-----
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---------------Surface Mount6-TSSOP, SC-88, SOT-363--55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)-2 N-Channel (Dual)300m Ω @ 700mA, 4.5V1.5V @ 250μA113pF @ 10V-1.4nC @ 4.5V-Logic Level GateACTIVE (Last Updated: 2 days ago)10 WeeksSurface Mount628mgSILICONPowerTrench®e3yes6EAR99300MOhm-FET General Purpose Power20V300mWGULL WING700mA2DualENHANCEMENT MODE300mW5 nsSWITCHING7ns7 ns9 ns700mA12V20VMETAL-OXIDE SEMICONDUCTOR1.1mm2mm1.25mmNoROHS3 CompliantLead FreeTin1.1V0.7A150°CNo SVHC
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