FDG6332C_F085

Fairchild/ON Semiconductor FDG6332C_F085

Part Number:
FDG6332C_F085
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2847622-FDG6332C_F085
Description:
MOSFET N/P-CH 20V SC70-6
ECAD Model:
Datasheet:
FDG6332C_F085

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Specifications
Fairchild/ON Semiconductor FDG6332C_F085 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG6332C_F085.
  • Vgs(th) (Max) @ Id:
    1.5V @ 250µA
  • Supplier Device Package:
    SC-70-6
  • Series:
    Automotive, AEC-Q101, PowerTrench®
  • Rds On (Max) @ Id, Vgs:
    300 mOhm @ 700mA, 4.5V
  • Power - Max:
    300mW
  • Packaging:
    Tape & Reel (TR)
  • Package / Case:
    6-TSSOP, SC-88, SOT-363
  • Operating Temperature:
    -55°C ~ 150°C (TJ)
  • Mounting Type:
    Surface Mount
  • Input Capacitance (Ciss) (Max) @ Vds:
    113pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs:
    1.5nC @ 4.5V
  • FET Type:
    N and P-Channel
  • FET Feature:
    Logic Level Gate
  • Drain to Source Voltage (Vdss):
    20V
  • Current - Continuous Drain (Id) @ 25°C:
    700mA, 600mA
Description
part No. FDG6332C_F085 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
FDG6332C_F085 More Descriptions
Dual N & P-Channel 20 V 300 mOhm 1.5 nC PowerTrench Mosfet - SC-70-6
Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N AND P CH, 20V, 700MA, SC-70-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:300mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-70; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Product Comparison
The three parts on the right have similar specifications to FDG6332C_F085.
  • Image
    Part Number
    Manufacturer
    Vgs(th) (Max) @ Id:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Power - Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    FET Feature
    Lifecycle Status
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Transistor Element Material
    Series
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Current Rating
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Technology
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Threshold Voltage
    Drain Current-Max (Abs) (ID)
    Max Junction Temperature (Tj)
    REACH SVHC
    View Compare
  • FDG6332C_F085
    FDG6332C_F085
    1.5V @ 250µA
    SC-70-6
    Automotive, AEC-Q101, PowerTrench®
    300 mOhm @ 700mA, 4.5V
    300mW
    Tape & Reel (TR)
    6-TSSOP, SC-88, SOT-363
    -55°C ~ 150°C (TJ)
    Surface Mount
    113pF @ 10V
    1.5nC @ 4.5V
    N and P-Channel
    Logic Level Gate
    20V
    700mA, 600mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDG6320C_D87Z
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    SC-88 (SC-70-6)
    -55°C~150°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    300mW
    N and P-Channel
    4Ohm @ 220mA, 4.5V
    1.5V @ 250μA
    9.5pF @ 10V
    220mA 140mA
    0.4nC @ 4.5V
    25V
    Logic Level Gate
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDG6308P
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    -
    2 P-Channel (Dual)
    400m Ω @ 600mA, 4.5V
    1.5V @ 250μA
    153pF @ 10V
    -
    2.5nC @ 4.5V
    20V
    Logic Level Gate
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Surface Mount
    6
    28mg
    SILICON
    PowerTrench®
    e3
    yes
    6
    EAR99
    400MOhm
    Tin (Sn)
    Other Transistors
    -20V
    300mW
    GULL WING
    -600mA
    2
    Dual
    ENHANCEMENT MODE
    300mW
    5 ns
    SWITCHING
    15ns
    15 ns
    7 ns
    600mA
    8V
    -20V
    METAL-OXIDE SEMICONDUCTOR
    1mm
    2mm
    1.25mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • FDG6335N
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    -
    2 N-Channel (Dual)
    300m Ω @ 700mA, 4.5V
    1.5V @ 250μA
    113pF @ 10V
    -
    1.4nC @ 4.5V
    -
    Logic Level Gate
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Surface Mount
    6
    28mg
    SILICON
    PowerTrench®
    e3
    yes
    6
    EAR99
    300MOhm
    -
    FET General Purpose Power
    20V
    300mW
    GULL WING
    700mA
    2
    Dual
    ENHANCEMENT MODE
    300mW
    5 ns
    SWITCHING
    7ns
    7 ns
    9 ns
    700mA
    12V
    20V
    METAL-OXIDE SEMICONDUCTOR
    1.1mm
    2mm
    1.25mm
    No
    ROHS3 Compliant
    Lead Free
    Tin
    1.1V
    0.7A
    150°C
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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