Fairchild/ON Semiconductor FDD8424H

Name: FDD8424H
Brand: Fairchild/ON Semiconductor
SKU: 3069689-FDD8424H
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD8424H

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3069689-FDD8424H

Description:: MOSFET N/P-CH 40V 9A/6.5A DPAK

ECAD Model:

Datasheet:: FDD8424H

Specifications

Fairchild/ON Semiconductor FDD8424H technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD8424H.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-5, DPak (4 Leads Tab), TO-252AD
Number of Pins
5
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
24MOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
3.1W
Terminal Position
SINGLE
Terminal Form
GULL WING
Base Part Number
FDD8424
JESD-30 Code
R-PSSO-G4
Number of Elements
2
Number of Channels
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.1W
Case Connection
DRAIN
Turn On Delay Time
7 ns
Power - Max
1.3W
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
24m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 20V
Current - Continuous Drain (Id) @ 25°C
9A 6.5A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
3ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
3 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
9A
Threshold Voltage
1.7V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
9A
Drain to Source Breakdown Voltage
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Height
2.517mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The ON Semiconductor FDD8424H is a high-performance, low-cost, N-channel and P-channel MOSFET array. This device is designed to provide superior performance in a wide range of applications, including power management, motor control, and switching. The FDD8424H features a maximum drain-source voltage of 40V, a maximum drain current of 9A (N-channel) and 6.5A (P-channel), and a maximum power dissipation of 1.2W. It is housed in a 5-pin (4 Tab) TO-252 package, making it ideal for space-constrained applications. The FDD8424H is designed to provide excellent switching performance, low on-resistance, and low gate charge, making it an ideal choice for high-efficiency power management and motor control applications.

FDD8424H More Descriptions

Trans MOSFET N/P-CH 40V 9A/6.5A Automotive 5-Pin(4 Tab) DPAK T/R
Power Field-Effect Transistor, 20A I(D), 40V, 0.024ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
These dual N and P-channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Transistor Polarity = P-Channel / Transistor Polarity = N-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 40 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 5 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.3

Certification