Diodes Incorporated DSS5240V-7

Name: DSS5240V-7
Brand: Diodes Incorporated
SKU: 3813393-DSS5240V-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DSS5240V-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3813393-DSS5240V-7

Description:: TRANS PNP 40V 1.8A SOT-563

ECAD Model:

Datasheet:: DSS5240V-7

Specifications

Diodes Incorporated DSS5240V-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DSS5240V-7.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
600mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
150MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DSS5240
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1.8A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
530mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-530mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
300
Height
600μm
Length
1.6mm
Width
1.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DSS5240V-7 Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -530mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 530mV @ 200mA, 2A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 1.8A volts.

DSS5240V-7 Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -530mV
the vce saturation(Max) is 530mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 150MHz

DSS5240V-7 Applications
There are a lot of Diodes Incorporated
DSS5240V-7 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DSS5240V-7 More Descriptions

DSS5240V Series 40 V 1.8 A Low VCE(SAT) PNP Surface Mount Transistor - SOT-563
TRANSISTOR, PNP, 40V, 100mA, 600mW, SOT-563; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:100mA; No. of Pins:6 ;RoHS Compliant: Yes
TRANSISTOR, PNP, SOT563, 0.6W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Typ Gain Bandwidth ft:150MHz; Power Dissipation Pd:0.6W; DC Collector Current:0.1A; DC Current Gain hFE:300; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-563; SVHC:No SVHC (18-Jun-2010); Collector Emitter Voltage Vces:120mV; Max Current Ic Continuous a:0.1A; Min Hfe:300; Package / Case:SOT-563; Power Dissipation:0.6W; Termination Type:SMD; Transistor Type:Low Saturation

Product Comparison

The three parts on the right have similar specifications to DSS5240V-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-30 Code

Case Connection

Power - Max

Transistor Application

Continuous Collector Current

Additional Feature

Reference Standard

View Compare
DSS5240V-7

Diodes Incorporated

12 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

3.005049mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

6

SMD/SMT

EAR99

Matte Tin (Sn)

Other Transistors

600mW

DUAL

FLAT

260

150MHz

40

DSS5240

6

1

Single

600mW

150MHz

PNP

PNP

40V

1.8A

300 @ 100mA 5V

100nA

530mV @ 200mA, 2A

40V

150MHz

-530mV

40V

40V

-5V

300

600μm

1.6mm

1.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
DSS5140V-7

Diodes Incorporated

12 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

3.005049mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

6

SMD/SMT

EAR99

Matte Tin (Sn)

Other Transistors

600mW

DUAL

FLAT

260

150MHz

40

DSS5140

6

1

Single

600mW

150MHz

PNP

PNP

40V

1A

300 @ 100mA 5V

100nA

310mV @ 100mA, 1A

40V

150MHz

-310mV

40V

40V

-5V

300

600μm

1.6mm

1.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

DSS5240V-7 vs DSS5140V-7
DSS5540X-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-243AA

4

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

yes

Active

1 (Unlimited)

3

-

EAR99

Matte Tin (Sn)

Other Transistors

900mW

-

FLAT

260

-

40

-

3

1

Single

-

60MHz

PNP

PNP

375mV

4A

150 @ 2A 2V

100nA ICBO

375mV @ 500mA, 5A

40V

60MHz

-

40V

-40V

-6V

-

-

-

-

No SVHC

No

ROHS3 Compliant

-

R-PSSO-F3

COLLECTOR

900mW

SWITCHING

-4A

-

-

DSS5240V-7 vs DSS5540X-13
DSS5160T-7

Diodes Incorporated

12 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

3

-

EAR99

Matte Tin (Sn)

Other Transistors

725mW

DUAL

GULL WING

260

-

40

DSS5160

-

1

Single

-

150MHz

PNP

PNP

60V

1A

150 @ 500mA 5V

100nA ICBO

340mV @ 100mA, 1A

60V

150MHz

-340mV

60V

-80V

-5V

-

1.1mm

3mm

1.4mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

725mW

SWITCHING

-

HIGH RELIABILITY

AEC-Q101

DSS5240V-7 vs DSS5160T-7