Diodes Incorporated DSS5240T-7

Name: DSS5240T-7
Brand: Diodes Incorporated
SKU: 3068756-DSS5240T-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DSS5240T-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3068756-DSS5240T-7

Description:: TRANS PNP 40V 2A SOT-23

ECAD Model:

Datasheet:: DSS5240T-7

Specifications

Diodes Incorporated DSS5240T-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DSS5240T-7.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
600mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DSS5240
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
730mW
Power - Max
600mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
210 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-350mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
300
Height
1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DSS5240T-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 210 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 2A volts.

DSS5240T-7 Features
the DC current gain for this device is 210 @ 1A 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

DSS5240T-7 Applications
There are a lot of Diodes Incorporated
DSS5240T-7 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DSS5240T-7 More Descriptions

DSS5240T Series 40 V 2 A Low VCE(SAT) PNP Surface Mount Transistor - SOT-23-3
Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 40V 2A 730mW 3-Pin SOT-23 T/R
Transistor, PNP, SOT23, 0.6W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:100MHz; Power Dissipation
Transistor, Pnp, 40V, 100Ma, 600Mw, Sot-23; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:100Ma; Power Dissipation:600Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. DSS5240T-7
TRANSISTOR, PNP, SOT23, 0.6W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 600mW; DC Collector Current: 100mA; DC Current Gain hFE: 300hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 100mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 300; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Low Saturation (BISS)

Product Comparison

The three parts on the right have similar specifications to DSS5240T-7.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Power - Max

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

JESD-30 Code

Case Connection

Continuous Collector Current

Configuration

Frequency - Transition

View Compare
DSS5240T-7

Diodes Incorporated

15 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

Other Transistors

600mW

DUAL

GULL WING

260

100MHz

40

DSS5240

3

1

Single

730mW

600mW

SWITCHING

100MHz

PNP

PNP

40V

2A

210 @ 1A 2V

100nA ICBO

350mV @ 200mA, 2A

40V

100MHz

-350mV

40V

40V

5V

300

1mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
DSS5540X-13

Diodes Incorporated

15 Weeks

-

Surface Mount

Surface Mount

TO-243AA

4

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

yes

Active

1 (Unlimited)

3

-

EAR99

Other Transistors

900mW

-

FLAT

260

-

40

-

3

1

Single

-

900mW

SWITCHING

60MHz

PNP

PNP

375mV

4A

150 @ 2A 2V

100nA ICBO

375mV @ 500mA, 5A

40V

60MHz

-

40V

-40V

-6V

-

-

-

-

No SVHC

No

ROHS3 Compliant

-

Matte Tin (Sn)

R-PSSO-F3

COLLECTOR

-4A

-

-

DSS5240T-7 vs DSS5540X-13
DSS5240Y-7

Diodes Incorporated

15 Weeks

-

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2010

e3

yes

Active

1 (Unlimited)

6

-

EAR99

Other Transistors

625mW

DUAL

GULL WING

260

-

40

-

6

1

-

-

625mW

SWITCHING

-

PNP

PNP

350mV

2A

210 @ 1A 2V

100nA ICBO

350mV @ 200mA, 2A

40V

220MHz

-

-

40V

-

-

-

-

-

No SVHC

No

ROHS3 Compliant

-

Matte Tin (Sn)

-

-

-

SINGLE

220MHz

DSS5240T-7 vs DSS5240Y-7
DSS5160U-7

Diodes Incorporated

15 Weeks

Tin

Surface Mount

Surface Mount

SC-70, SOT-323

3

6.010099mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

Other Transistors

400mW

DUAL

GULL WING

260

150MHz

40

DSS5160

3

1

Single

400mW

-

-

150MHz

PNP

PNP

60V

1A

150 @ 500mA 5V

100nA

340mV @ 100mA, 1A

60V

150MHz

-340mV

60V

80V

5V

200

1mm

2.15mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

DSS5240T-7 vs DSS5160U-7