Diodes Incorporated DSS5160T-7

Name: DSS5160T-7
Brand: Diodes Incorporated
SKU: 2845157-DSS5160T-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DSS5160T-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2845157-DSS5160T-7

Description:: TRANS PNP 60V 1A SOT23

ECAD Model:

Datasheet:: DSS5160T-7

Specifications

Diodes Incorporated DSS5160T-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DSS5160T-7.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
725mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DSS5160
Reference Standard
AEC-Q101
Number of Elements
1
Element Configuration
Single
Power - Max
725mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
340mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-340mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-5V
Height
1.1mm
Length
3mm
Width
1.4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DSS5160T-7 Overview
This device has a DC current gain of 150 @ 500mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -340mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.

DSS5160T-7 Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -340mV
the vce saturation(Max) is 340mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 150MHz

DSS5160T-7 Applications
There are a lot of Diodes Incorporated
DSS5160T-7 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DSS5160T-7 More Descriptions

DSS5160T Series 60 V 1 A Surface Mount PNP Transistor - SOT-23
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 60V 1A Automotive 3-Pin SOT-23 T/R
Transistor,Discrete,PNP,60V,1A,SOT23 | Diodes Inc DSS5160T-7
Trans, Pnp, 60V, 1A, 150Deg C, 0.725W Rohs Compliant: Yes |Diodes Inc. DSS5160T-7

Product Comparison

The three parts on the right have similar specifications to DSS5160T-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Reference Standard

Number of Elements

Element Configuration

Power - Max

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Termination

Frequency

Pin Count

Power Dissipation

hFE Min

Radiation Hardening

Contact Plating

JESD-30 Code

Case Connection

Continuous Collector Current

View Compare
DSS5160T-7

Diodes Incorporated

12 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

725mW

DUAL

GULL WING

260

40

DSS5160

AEC-Q101

1

Single

725mW

SWITCHING

150MHz

PNP

PNP

60V

1A

150 @ 500mA 5V

100nA ICBO

340mV @ 100mA, 1A

60V

150MHz

-340mV

60V

-80V

-5V

1.1mm

3mm

1.4mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
DSS5140V-7

Diodes Incorporated

12 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

3.005049mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

-

Other Transistors

600mW

DUAL

FLAT

260

40

DSS5140

-

1

Single

-

-

150MHz

PNP

PNP

40V

1A

300 @ 100mA 5V

100nA

310mV @ 100mA, 1A

40V

150MHz

-310mV

40V

40V

-5V

600μm

1.6mm

1.2mm

No SVHC

ROHS3 Compliant

Lead Free

SMD/SMT

150MHz

6

600mW

300

No

-

-

-

-

DSS5160T-7 vs DSS5140V-7
DSS5240T-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

-

-

Other Transistors

600mW

DUAL

GULL WING

260

40

DSS5240

-

1

Single

600mW

SWITCHING

100MHz

PNP

PNP

40V

2A

210 @ 1A 2V

100nA ICBO

350mV @ 200mA, 2A

40V

100MHz

-350mV

40V

40V

5V

1mm

2.9mm

1.3mm

No SVHC

ROHS3 Compliant

Lead Free

SMD/SMT

100MHz

3

730mW

300

No

Tin

-

-

-

DSS5160T-7 vs DSS5240T-7
DSS5540X-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-243AA

4

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

Other Transistors

900mW

-

FLAT

260

40

-

-

1

Single

900mW

SWITCHING

60MHz

PNP

PNP

375mV

4A

150 @ 2A 2V

100nA ICBO

375mV @ 500mA, 5A

40V

60MHz

-

40V

-40V

-6V

-

-

-

No SVHC

ROHS3 Compliant

-

-

-

3

-

-

No

-

R-PSSO-F3

COLLECTOR

-4A

DSS5160T-7 vs DSS5540X-13