Diodes Incorporated DSS4540X-13
- Part Number:
- DSS4540X-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068884-DSS4540X-13
- Description:
- TRANS NPN 40V 4A SOT89-3
- ECAD Model:
-
- Datasheet:
- DSS4540X-13
Diodes Incorporated DSS4540X-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DSS4540X-13.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation2W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency70MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDSS4540
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Power - Max900mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product70MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 2A 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic355mV @ 500mA, 5A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency70MHz
- Collector Emitter Saturation Voltage355mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)6V
- hFE Min300
- Height1.6mm
- Length4.6mm
- Width2.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DSS4540X-13 Overview
In this device, the DC current gain is 250 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 355mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 355mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.70MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
DSS4540X-13 Features
the DC current gain for this device is 250 @ 2A 2V
a collector emitter saturation voltage of 355mV
the vce saturation(Max) is 355mV @ 500mA, 5A
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
DSS4540X-13 Applications
There are a lot of Diodes Incorporated
DSS4540X-13 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 250 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 355mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 355mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.70MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
DSS4540X-13 Features
the DC current gain for this device is 250 @ 2A 2V
a collector emitter saturation voltage of 355mV
the vce saturation(Max) is 355mV @ 500mA, 5A
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
DSS4540X-13 Applications
There are a lot of Diodes Incorporated
DSS4540X-13 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DSS4540X-13 More Descriptions
NPN 40 V 4 A 0.9 W Surface Mount Transistor - SOT-89
Small Signal Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 40V 4A 4P 3 Tab SOT89 | Diodes Inc DSS4540X-13
Trans GP BJT NPN 40V 4A 2000mW 4-Pin(3 Tab) SOT-89 T/R
Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
TRANSISTOR, NPN, SOT89, 0.9W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 900mW; DC Collector Current: 500mA; DC Current Gain hFE: 300hFE; Transistor Cas
TRANSISTOR, NPN, SOT89, 0.9W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:900mW; DC Collector Current:500mA; DC Current Gain hFE:300; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:90mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:70MHz; Hfe Min:300; Package / Case:SOT-89; Power Dissipation Pd:900mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
Small Signal Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 40V 4A 4P 3 Tab SOT89 | Diodes Inc DSS4540X-13
Trans GP BJT NPN 40V 4A 2000mW 4-Pin(3 Tab) SOT-89 T/R
Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
TRANSISTOR, NPN, SOT89, 0.9W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 900mW; DC Collector Current: 500mA; DC Current Gain hFE: 300hFE; Transistor Cas
TRANSISTOR, NPN, SOT89, 0.9W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:900mW; DC Collector Current:500mA; DC Current Gain hFE:300; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:90mV; Current Ic Continuous a Max:500mA; Gain Bandwidth ft Typ:70MHz; Hfe Min:300; Package / Case:SOT-89; Power Dissipation Pd:900mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
The three parts on the right have similar specifications to DSS4540X-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal PositionContinuous Collector CurrentView Compare
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DSS4540X-1313 WeeksSurface MountSurface MountTO-243AA351.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3SMD/SMTEAR99Matte Tin (Sn)Other Transistors2WFLAT26070MHz40DSS454031Single2WCOLLECTOR900mWSWITCHING70MHzNPNNPN40V4A250 @ 2A 2V100nA355mV @ 500mA, 5A40V70MHz355mV40V40V6V3001.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free--- -
12 WeeksSurface MountSurface MountSOT-563, SOT-66663.005049mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)6SMD/SMTEAR99Matte Tin (Sn)Other Transistors600mWFLAT260-40DSS424061Single600mW---150MHzNPNNPN40V2A300 @ 500mA 5V100nA400mV @ 200mA, 2A40V150MHz400mV40V40V5V300600μm1.6mm1.2mmNo SVHCNoROHS3 CompliantLead FreeDUAL-
-
15 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)3SMD/SMTEAR99Matte Tin (Sn)Other Transistors400mWGULL WING260150MHz40DSS416031Single400mW---150MHzNPNNPN60V1A200 @ 500mA 5V100nA280mV @ 100mA, 1A60V150MHz280mV60V80V5V2501mm2.15mm1.3mmNo SVHCNoROHS3 CompliantLead FreeDUAL-
-
12 WeeksSurface MountSurface MountSOT-563, SOT-66663.005049mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)6-EAR99Matte Tin (Sn)Other Transistors600mWFLAT260150MHz40DSS416061Single600mW---150MHzNPNNPN60V1A200 @ 500mA 5V100nA250mV @ 100mA, 1A60V150MHz250mV60V80V5V-600μm1.6mm1.2mmNo SVHCNoROHS3 CompliantLead FreeDUAL1A
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