Diodes Incorporated DSS4160V-7

Name: DSS4160V-7
Brand: Diodes Incorporated
SKU: 2464671-DSS4160V-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DSS4160V-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2464671-DSS4160V-7

Description:: TRANS NPN 60V 1A SOT-563

ECAD Model:

Datasheet:: DSS4160V-7

Specifications

Diodes Incorporated DSS4160V-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DSS4160V-7.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
600mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
150MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DSS4160
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
1A
Height
600μm
Length
1.6mm
Width
1.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DSS4160V-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.

DSS4160V-7 Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DSS4160V-7 Applications
There are a lot of Diodes Incorporated
DSS4160V-7 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DSS4160V-7 More Descriptions

Bipolar (BJT) Transistor NPN 60V 1A 150MHz 600mW Surface Mount SOT-563
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
DSS4160V Series 60 V 1 A Low VCE(SAT) NPN Surface Mount Transistor - SOT-563
Trans GP BJT NPN 60V 1A 600mW 6-Pin SOT-563 T/R / TRANS NPN 60V 1A SOT-563
Transistor, Npn, 60V, 100Ma, 600Mw, Sot-563; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Transition Frequency Ft:150Mhz; Power Dissipation Pd:600Mw; Dc Collector Current:100Ma; Dc Current Gain Hfe:250Hfe Rohs Compliant: Yes
TRANSISTOR, NPN, SOT563, 0.6W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 600mW; DC Collector Current: 100mA; DC Current Gain hFE: 250hFE; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 110mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 250; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Low Saturation (BISS)

Product Comparison

The three parts on the right have similar specifications to DSS4160V-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Reference Standard

Power - Max

Termination

Case Connection

Transistor Application

hFE Min

View Compare
DSS4160V-7

Diodes Incorporated

12 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

3.005049mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

Other Transistors

600mW

DUAL

FLAT

260

150MHz

40

DSS4160

6

1

Single

600mW

150MHz

NPN

NPN

60V

1A

200 @ 500mA 5V

100nA

250mV @ 100mA, 1A

60V

150MHz

250mV

60V

80V

5V

1A

600μm

1.6mm

1.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
DSS4160T-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

725mW

DUAL

GULL WING

260

-

40

DSS4160

-

1

Single

-

150MHz

NPN

NPN

60V

1A

200 @ 500mA 5V

100nA

280mV @ 100mA, 1A

60V

150MHz

280mV

60V

80V

5V

-

1.1mm

3mm

1.4mm

No SVHC

-

ROHS3 Compliant

Lead Free

HIGH RELIABILITY

AEC-Q101

725mW

-

-

-

-

DSS4160V-7 vs DSS4160T-7
DSS4540X-13

Diodes Incorporated

13 Weeks

Surface Mount

Surface Mount

TO-243AA

3

51.993025mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

2W

-

FLAT

260

70MHz

40

DSS4540

3

1

Single

2W

70MHz

NPN

NPN

40V

4A

250 @ 2A 2V

100nA

355mV @ 500mA, 5A

40V

70MHz

355mV

40V

40V

6V

-

1.6mm

4.6mm

2.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

900mW

SMD/SMT

COLLECTOR

SWITCHING

300

DSS4160V-7 vs DSS4540X-13
DSS4160U-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

3

6.010099mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

400mW

DUAL

GULL WING

260

150MHz

40

DSS4160

3

1

Single

400mW

150MHz

NPN

NPN

60V

1A

200 @ 500mA 5V

100nA

280mV @ 100mA, 1A

60V

150MHz

280mV

60V

80V

5V

-

1mm

2.15mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

SMD/SMT

-

-

250

DSS4160V-7 vs DSS4160U-7