Diodes Incorporated DMG6968UDM-7

Name: DMG6968UDM-7
Brand: Diodes Incorporated
SKU: 2473265-DMG6968UDM-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMG6968UDM-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2473265-DMG6968UDM-7

Description:: MOSFET 2N-CH 20V 6.5A SOT-26

ECAD Model:

Datasheet:: DMG6968UDM-7

Specifications

Diodes Incorporated DMG6968UDM-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG6968UDM-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
24mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
850mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMG6968UDM
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
850mW
Turn On Delay Time
53 ns
FET Type
2 N-Channel (Dual) Common Drain
Rds On (Max) @ Id, Vgs
24m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
143pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
8.8nC @ 4.5V
Rise Time
78ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
234 ns
Turn-Off Delay Time
562 ns
Continuous Drain Current (ID)
6.5A
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.1mm
Length
3mm
Width
1.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMG6968UDM-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMG6968UDM-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMG6968UDM-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMG6968UDM-7 More Descriptions

Transistor MOSFET Array Dual N-CH 20V 6.5A 6-Pin SOT-26 T/R
DMG Series 20 V 24 mOhm 8.8 nC Dual N-Channel Enhancement Mode Mosfet - SOT-26
Mosfet, Dual, N-Ch, 20V, 6.5A Rohs Compliant: Yes |Diodes Inc. DMG6968UDM-7
Trans MOSFET N-CH 20V 6.5A Automotive 6-Pin SOT-26 T/R

Product Comparison

The three parts on the right have similar specifications to DMG6968UDM-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Weight

Number of Channels

Reference Standard

Configuration

Power - Max

Transistor Application

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
DMG6968UDM-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SOT-23-6

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

6

EAR99

24mOhm

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

850mW

GULL WING

260

40

DMG6968UDM

6

2

Dual

ENHANCEMENT MODE

850mW

53 ns

2 N-Channel (Dual) Common Drain

24m Ω @ 6.5A, 4.5V

900mV @ 250μA

143pF @ 10V

8.8nC @ 4.5V

78ns

20V

234 ns

562 ns

6.5A

8V

20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.1mm

3mm

1.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
DMG6301UDW-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

-

Active

1 (Unlimited)

-

EAR99

-

Matte Tin (Sn)

-

-

300mW

-

260

30

DMG6301

-

-

Dual

-

-

2.9 ns

2 N-Channel (Dual)

4 Ω @ 400mA, 4.5V

1.5V @ 250μA

27.9pF @ 10V

0.36nC @ 4.5V

1.8ns

25V

2.3 ns

6.6 ns

240mA

8V

-

-

Standard

-

-

-

-

-

ROHS3 Compliant

-

6.010099mg

2

-

-

-

-

-

-

-

DMG6968UDM-7 vs DMG6301UDW-7
DMG6898LSDQ-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

yes

Active

1 (Unlimited)

8

EAR99

-

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

1.28W

GULL WING

260

40

-

-

2

-

ENHANCEMENT MODE

-

-

2 N-Channel (Dual)

16m Ω @ 9.4A, 4.5V

1.5V @ 250μA

1149pF @ 10V

26nC @ 10V

-

20V

-

-

9.5A

-

-

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

-

-

-

ROHS3 Compliant

-

-

-

AEC-Q101

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

1.28W

SWITCHING

0.016Ohm

30A

20V

DMG6968UDM-7 vs DMG6898LSDQ-13
DMG6898LSD-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

8

EAR99

-

Matte Tin (Sn)

ESD PROTECTED, HIGH RELIABILITY

FET General Purpose Power

1.28W

GULL WING

260

40

DMG6898LSD

8

2

-

ENHANCEMENT MODE

1.28W

11.67 ns

2 N-Channel (Dual)

16m Ω @ 9.4A, 4.5V

1.5V @ 250μA

1149pF @ 10V

26nC @ 10V

12.49ns

20V

12.33 ns

35.89 ns

9.5A

12V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.5mm

4.95mm

3.95mm

No SVHC

No

ROHS3 Compliant

Lead Free

73.992255mg

-

-

-

-

SWITCHING

0.016Ohm

30A

-

DMG6968UDM-7 vs DMG6898LSD-13