Diodes Incorporated DMC3400SDW-13
- Part Number:
- DMC3400SDW-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2473921-DMC3400SDW-13
- Description:
- MOSFET N/P-CH 30V SOT363
- Datasheet:
- DMC3400SDW-13
Diodes Incorporated DMC3400SDW-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMC3400SDW-13.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Power Dissipation310mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs400m Ω @ 590mA, 10V
- Vgs(th) (Max) @ Id1.6V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds55pF @ 15V
- Current - Continuous Drain (Id) @ 25°C650mA 450mA
- Gate Charge (Qg) (Max) @ Vgs1.4nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Continuous Drain Current (ID)450mA
- Drain-source On Resistance-Max0.4Ohm
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- RoHS StatusROHS3 Compliant
DMC3400SDW-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMC3400SDW-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMC3400SDW-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMC3400SDW-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMC3400SDW-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMC3400SDW-13 More Descriptions
Trans MOSFET N/P-CH 30V/30V 0.65A/0.45A 6-Pin SOT-363 T/R
Mosfet, N/P-Ch, 30V, 0.65A, Sot363; Transistor Polarity:N And P Complement; Continuous Drain Current Id:650Ma; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Rohs Compliant: Yes |Diodes Inc. DMC3400SDW-13
Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N/P-CH, 30V, 0.65A, SOT363; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 650mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 310mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Mosfet, N/P-Ch, 30V, 0.65A, Sot363; Transistor Polarity:N And P Complement; Continuous Drain Current Id:650Ma; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Rohs Compliant: Yes |Diodes Inc. DMC3400SDW-13
Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N/P-CH, 30V, 0.65A, SOT363; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 650mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 310mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMC3400SDW-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Polarity/Channel TypeContinuous Drain Current (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyFET FeatureRoHS StatusJESD-30 CodeNumber of ChannelsPower DissipationGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Max Junction Temperature (Tj)HeightWeightPbfree CodeSubcategoryBase Part NumberPin CountTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeDrain to Source Breakdown VoltageLengthWidthREACH SVHCRadiation HardeningLead FreeAdditional FeatureView Compare
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DMC3400SDW-1315 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636SILICON-55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)6EAR99Matte Tin (Sn)310mWDUALGULL WINGNOT SPECIFIEDNOT SPECIFIED2SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODEN and P-ChannelSWITCHING400m Ω @ 590mA, 10V1.6V @ 250μA55pF @ 15V650mA 450mA1.4nC @ 10V30VN-CHANNEL AND P-CHANNEL450mA0.4Ohm30VMETAL-OXIDE SEMICONDUCTORStandardROHS3 Compliant------------------------
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15 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-363-SILICON-55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)6EAR99Matte Tin (Sn)310mWDUALGULL WING260302-ENHANCEMENT MODEN and P-ChannelSWITCHING400m Ω @ 590mA, 10V1.6V @ 250μA55pF @ 15V650mA 450mA1.4nC @ 10V30VN-CHANNEL AND P-CHANNEL450mA0.4Ohm30VMETAL-OXIDE SEMICONDUCTORStandardROHS3 CompliantR-PDSO-G62310mW20V0.65A150°C1.1mm----------------
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17 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJDigi-Reel®2009e3Active1 (Unlimited)8EAR99Matte Tin (Sn)1.8WDUALGULL WING260402-ENHANCEMENT MODEN and P-ChannelSWITCHING28m Ω @ 6A, 10V3V @ 250μA472pF @ 15V6.6A 6.8A10.5nC @ 10V-N-CHANNEL AND P-CHANNEL7.4A--METAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 Compliant--2.1W20V5.5A-1.5mm73.992255mgyesOther TransistorsDMC3028LSD83.5 ns4.9ns28 ns44 ns30V5mm4mmNo SVHCNoLead Free-
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16 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)2012e3Active1 (Unlimited)8EAR99Matte Tin (Sn)2.5WDUALGULL WING260402-ENHANCEMENT MODEN and P-ChannelSWITCHING21m Ω @ 7A, 10V2.1V @ 250μA767pF @ 10V8.5A 7A16.1nC @ 10V30VN-CHANNEL AND P-CHANNEL8.5A-30VMETAL-OXIDE SEMICONDUCTORLogic Level GateROHS3 Compliant--2.5W20V--1.5mm73.992255mgyesOther TransistorsDMC30218---50.1 ns-4.95mm3.95mmNo SVHCNo-HIGH RELIABILITY
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