STMicroelectronics BUT11A

Name: BUT11A
Brand: STMicroelectronics
SKU: 2469352-BUT11A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUT11A

Manufacturer:: STMicroelectronics

Ventron No:: 2469352-BUT11A

Description:: TRANS NPN 450V 5A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing BUT11A

Specifications

STMicroelectronics BUT11A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUT11A.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
450V
Max Power Dissipation
100W
Current Rating
5A
Base Part Number
BUT11
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
450V
Max Collector Current
5A
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 2.5A
Collector Emitter Breakdown Voltage
450V
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
1kV
Emitter Base Voltage (VEBO)
9V
DC Current Gain-Min (hFE)
10
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BUT11A Overview
A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 500mA, 2.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.

BUT11A Features
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A

BUT11A Applications
There are a lot of ON Semiconductor
BUT11A applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BUT11A More Descriptions

Transistor,bjt,npn,450V V(Br)Ceo,5A I(C),to-220Ab Rohs Compliant: Yes |Onsemi BUT11A
Trans GP BJT NPN 450V 5A 3-Pin(3 Tab) TO-220AB Bulk - Bulk
450V 100W 5A NPN TO-220-3 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Si Transistor
Transistor NPN 5A/450V 83W TO220 BUT 11 A

Product Comparison

The three parts on the right have similar specifications to BUT11A.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

DC Current Gain-Min (hFE)

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency

Configuration

DC Current Gain (hFE) (Min) @ Ic, Vce

Surface Mount

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Power Dissipation-Max (Abs)

View Compare
BUT11A

STMicroelectronics

ACTIVE (Last Updated: 3 days ago)

2 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

150°C TJ

Bulk

2001

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

450V

100W

5A

BUT11

1

Single

100W

SWITCHING

NPN

NPN

450V

5A

1mA

TO-220AB

1.5V @ 500mA, 2.5A

450V

1.5V

100V

1kV

9V

10

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUT11FTU

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-220-3 Full Pack

-

-

-

150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

BUT11

-

-

-

-

-

NPN

-

-

1mA

-

1.5V @ 600mA, 3A

-

-

-

-

-

-

-

-

-

100W

400V

5A

-

-

-

-

-

-

-

-

-

-

-

-

-

BUT11A vs BUT11FTU
BUT11-S

Bourns Inc.

-

-

-

Through Hole

Through Hole

TO-220-3

3

-

-

-65°C~150°C TJ

Bulk

1993

-

-

Obsolete

1 (Unlimited)

-

EAR99

Other Transistors

-

100W

-

BUT11

1

-

100W

-

NPN

NPN

400V

5A

50μA

-

1.5V @ 600mA, 3A

400V

-

-

850V

10V

-

No

ROHS3 Compliant

-

-

-

5A

12MHz

Single

20 @ 500mA 5V

-

-

-

-

-

-

-

-

-

-

BUT11A vs BUT11-S
BUT11APX-1200,127

NXP USA Inc.

-

-

-

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

-

-

SILICON

150°C TJ

Tube

1999

e3

-

Obsolete

1 (Unlimited)

3

-

Other Transistors

-

-

-

BUT11

1

-

-

SWITCHING

NPN

NPN

-

-

1mA

-

1V @ 400mA, 2A

-

-

-

-

-

-

-

ROHS3 Compliant

-

32W

550V

6A

-

SINGLE

20 @ 500mA 5V

NO

TIN

SINGLE

NOT SPECIFIED

not_compliant

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

32W

BUT11A vs BUT11APX-1200,127