STMicroelectronics BU808DFI

Name: BU808DFI
Brand: STMicroelectronics
SKU: 2468781-BU808DFI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BU808DFI

Manufacturer:: STMicroelectronics

Ventron No:: 2468781-BU808DFI

Description:: TRANS NPN DARL 700V ISOWATT218

ECAD Model:

Datasheet:: BU808DFI

Specifications

STMicroelectronics BU808DFI technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BU808DFI.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOWATT-218-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Voltage - Rated DC
700V
Max Power Dissipation
52W
Current Rating
8A
Base Part Number
BU808
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
52W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
700V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5A 5V
Current - Collector Cutoff (Max)
400μA
JEDEC-95 Code
TO-218
Vce Saturation (Max) @ Ib, Ic
1.6V @ 500mA, 5A
Collector Emitter Breakdown Voltage
700V
Collector Base Voltage (VCBO)
1.4kV
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
8A
VCEsat-Max
1.6 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BU808DFI Overview
This device has a DC current gain of 60 @ 5A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 8A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 8A.The maximum collector current is 8A volts.

BU808DFI Features
the DC current gain for this device is 60 @ 5A 5V
the vce saturation(Max) is 1.6V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 8A

BU808DFI Applications
There are a lot of STMicroelectronics
BU808DFI applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BU808DFI More Descriptions

Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 700V 8A 3-Pin(3 Tab) ISOWATT218
Darlington Transistors NPN Sw Darlington
TRANS NPN DARL 700V ISOWATT218
CoC and 2-years warranty / RFQ for pricing
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to BU808DFI.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

VCEsat-Max

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Supplier Device Package

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Published

View Compare
BU808DFI

STMicroelectronics

Through Hole

Through Hole

ISOWATT-218-3

3

SILICON

150°C TJ

Tube

Obsolete

1 (Unlimited)

3

EAR99

8541.29.00.95

Other Transistors

700V

52W

8A

BU808

3

1

NPN

Single

52W

ISOLATED

SWITCHING

NPN - Darlington

700V

8A

60 @ 5A 5V

400μA

TO-218

1.6V @ 500mA, 5A

700V

1.4kV

5V

8A

1.6 V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BU806

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

200V

1.5V @ 50mA, 5A

NPN - Darlington

TO-220AB

-

60W

Tube

TO-220-3

150°C (TJ)

Through Hole

-

-

100µA

8A

-

-

-

-

-

BU808DFI vs BU806
BU807TU

Fairchild/ON Semiconductor

-

Through Hole

TO-220-3

-

-

150°C TJ

Tube

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

BU807

-

-

-

-

-

-

-

NPN - Darlington

-

-

-

100μA

-

1.5V @ 50mA, 5A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-220-3

60W

150V

8A

-

BU808DFI vs BU807TU
BU806

Fairchild/ON Semiconductor

-

Through Hole

TO-220-3

-

-

150°C TJ

Bulk

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

BU806

-

-

-

-

-

-

-

NPN - Darlington

-

-

-

100μA

-

1.5V @ 50mA, 5A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-220-3

60W

200V

8A

2000

BU808DFI vs BU806