Fairchild/ON Semiconductor BU806
- Part Number:
- BU806
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467369-BU806
- Description:
- TRANS NPN DARL 200V 8A TO-220
- Datasheet:
- BU806/807 TO220B03 Pkg Drawing BU806/7
Fairchild/ON Semiconductor BU806 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BU806.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220-3
- Operating Temperature150°C TJ
- PackagingBulk
- Published2000
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberBU806
- Power - Max60W
- Transistor TypeNPN - Darlington
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 5A
- Voltage - Collector Emitter Breakdown (Max)200V
- Current - Collector (Ic) (Max)8A
BU806 Overview
A VCE saturation (Max) of 1.5V @ 50mA, 5A means Ic has reached its maximum value(saturated).Product package TO-220-3 comes from the supplier.Collector Emitter Breakdown occurs at 200VV - Maximum voltage.
BU806 Features
the vce saturation(Max) is 1.5V @ 50mA, 5A
the supplier device package of TO-220-3
BU806 Applications
There are a lot of ON Semiconductor
BU806 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
A VCE saturation (Max) of 1.5V @ 50mA, 5A means Ic has reached its maximum value(saturated).Product package TO-220-3 comes from the supplier.Collector Emitter Breakdown occurs at 200VV - Maximum voltage.
BU806 Features
the vce saturation(Max) is 1.5V @ 50mA, 5A
the supplier device package of TO-220-3
BU806 Applications
There are a lot of ON Semiconductor
BU806 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BU806 More Descriptions
Electronics BU806 Transistor NPN Silicon Darlington Bvceo=400V IC=8A TO-220 Case With Irnal Diode tal Defle
Silicon NPN Transistor Fast Switching Power Darlington
TRANS NPN DARL 200V 8A TO220-3
Silicon NPN Transistor Fast Switching Power Darlington
TRANS NPN DARL 200V 8A TO220-3
The three parts on the right have similar specifications to BU806.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):MountNumber of PinsTransistor Element MaterialNumber of TerminationsECCN CodeHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentVCEsat-MaxRadiation HardeningRoHS StatusLead FreeView Compare
-
BU806Through HoleTO-220-3TO-220-3150°C TJBulk2000Obsolete1 (Unlimited)BU80660WNPN - Darlington100μA1.5V @ 50mA, 5A200V8A--------------------------------------------
-
---------------200V1.5V @ 50mA, 5ANPN - DarlingtonTO-220AB-60WTubeTO-220-3150°C (TJ)Through Hole--100µA8A------------------------------
-
Through HoleISOWATT-218-3-150°C TJTube-Obsolete1 (Unlimited)BU808-NPN - Darlington400μA1.6V @ 500mA, 5A----------------Through Hole3SILICON3EAR998541.29.00.95Other Transistors700V52W8A31NPNSingle52WISOLATEDSWITCHING700V8A60 @ 5A 5VTO-218700V1.4kV5V8A1.6 VNoROHS3 CompliantLead Free
-
Through HoleTO-220-3TO-220-3150°C TJTube-Obsolete1 (Unlimited)BU80760WNPN - Darlington100μA1.5V @ 50mA, 5A150V8A-------------------------------------------
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