ON Semiconductor BSV52LT1G

Name: BSV52LT1G
Brand: ON Semiconductor
SKU: 2463521-BSV52LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSV52LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2463521-BSV52LT1G

Description:: TRANS NPN 12V 0.1A SOT-23

ECAD Model:

Datasheet:: BSV52LT1G

Specifications

ON Semiconductor BSV52LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BSV52LT1G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
12V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Frequency
400MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BSV52
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Power - Max
225mW
Transistor Application
SWITCHING
Gain Bandwidth Product
400MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
12V
Transition Frequency
400MHz
Collector Emitter Saturation Voltage
400mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
1.2V
hFE Min
25
Height
1.01mm
Length
3.04mm
Width
1.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSV52LT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 1V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 1.2V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.In the part, the transition frequency is 400MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.

BSV52LT1G Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 1.2V
the current rating of this device is 200mA
a transition frequency of 400MHz

BSV52LT1G Applications
There are a lot of ON Semiconductor
BSV52LT1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BSV52LT1G More Descriptions

Trans GP BJT NPN 12V 0.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
BSV52LT1G - 12 V 100 mA NPN Surface Mount Switching Transistor - SOT-23-3
ON Semi BSV52LT1G NPN Bipolar Transistor, 0.1 A, 12 V, 3-Pin SOT-23 | ON Semiconductor BSV52LT1G
Small Signal Bipolar Transistor, 0.1A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 12V 0.1A Automotive 3-Pin SOT-23 T/R
TRANSISTOR, NPN, 12V, 100MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 400MHz; Power Dissipation Pd: 225mW; DC Collector Current: 100mA; DC Current Gain hFE: 25hFE; T

Product Comparison

The three parts on the right have similar specifications to BSV52LT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Power - Max

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

JEDEC-95 Code

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Series

HTS Code

VCEsat-Max

Collector-Base Capacitance-Max

Mount

Weight

View Compare
BSV52LT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

4 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

12V

225mW

DUAL

GULL WING

260

200mA

400MHz

40

BSV52

3

1

Single

300mW

225mW

SWITCHING

400MHz

NPN

NPN

12V

100mA

40 @ 10mA 1V

100nA ICBO

400mV @ 5mA, 50mA

12V

400MHz

400mV

12V

20V

1.2V

25

1.01mm

3.04mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSV52LT1

ON Semiconductor

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e0

no

Obsolete

1 (Unlimited)

3

-

-

-

-

DUAL

GULL WING

240

-

-

30

-

3

1

-

-

225mW

SWITCHING

-

NPN

NPN

-

-

40 @ 10mA 1V

100nA ICBO

400mV @ 5mA, 50mA

-

400MHz

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

TIN LEAD

unknown

R-PDSO-G3

COMMERCIAL

SINGLE

TO-236AB

12V

100mA

400MHz

18ns

12ns

-

-

-

-

-

-

BSV52LT1G vs BSV52LT1
BSV52,215

Nexperia USA Inc.

-

4 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

150°C TJ

Tape & Reel (TR)

2009

e3

-

Active

1 (Unlimited)

3

EAR99

-

-

-

DUAL

GULL WING

260

-

-

40

BSV52

3

1

-

-

250mW

SWITCHING

-

NPN

NPN

-

-

40 @ 10mA 1V

400nA ICBO

400mV @ 5mA, 50mA

-

500MHz

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Tin (Sn)

-

-

Not Qualified

SINGLE

-

12V

100mA

500MHz

20ns

10ns

Automotive, AEC-Q101

8541.21.00.75

0.4 V

4pF

-

-

BSV52LT1G vs BSV52,215
BSV52

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 3 days ago)

39 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2000

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

12V

225mW

DUAL

GULL WING

-

200mA

400MHz

-

BSV52

-

1

Single

225mW

-

SWITCHING

400MHz

NPN

NPN

12V

200mA

40 @ 10mA 1V

100nA ICBO

400mV @ 5mA, 50mA

12V

400MHz

400mV

12V

20V

5V

40

930μm

2.92mm

1.3mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

30mg

BSV52LT1G vs BSV52