BSV52LT1

ON Semiconductor BSV52LT1

Part Number:
BSV52LT1
Manufacturer:
ON Semiconductor
Ventron No:
2468218-BSV52LT1
Description:
TRANS NPN 12V 0.1A SOT-23
ECAD Model:
Datasheet:
BSV52LT1

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Specifications
ON Semiconductor BSV52LT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BSV52LT1.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    225mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 10mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • JEDEC-95 Code
    TO-236AB
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 50mA
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    400MHz
  • Frequency - Transition
    400MHz
  • Turn Off Time-Max (toff)
    18ns
  • Turn On Time-Max (ton)
    12ns
  • RoHS Status
    Non-RoHS Compliant
Description
BSV52LT1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Parts of this part have transition frequencies of 400MHz.This device displays a 12V maximum voltage - Collector Emitter Breakdown.

BSV52LT1 Features
the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 400MHz


BSV52LT1 Applications
There are a lot of Rochester Electronics, LLC
BSV52LT1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BSV52LT1 More Descriptions
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 40 @ 10mA 1V 100mA 225mW 400MHz
Small Signal Bipolar Transistor, 0.1A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
BSV52LT1, SINGLE BIPOLAR TRANSISTORS;
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to BSV52LT1.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    RoHS Status
    Factory Lead Time
    Number of Pins
    Series
    Published
    ECCN Code
    HTS Code
    Base Part Number
    VCEsat-Max
    Collector-Base Capacitance-Max
    Lifecycle Status
    Contact Plating
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Mount
    Weight
    View Compare
  • BSV52LT1
    BSV52LT1
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    TIN LEAD
    DUAL
    GULL WING
    240
    unknown
    30
    3
    R-PDSO-G3
    COMMERCIAL
    1
    SINGLE
    225mW
    SWITCHING
    NPN
    NPN
    40 @ 10mA 1V
    100nA ICBO
    TO-236AB
    400mV @ 5mA, 50mA
    12V
    100mA
    400MHz
    400MHz
    18ns
    12ns
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSV52,215
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    e3
    -
    Active
    1 (Unlimited)
    3
    Tin (Sn)
    DUAL
    GULL WING
    260
    -
    40
    3
    -
    Not Qualified
    1
    SINGLE
    250mW
    SWITCHING
    NPN
    NPN
    40 @ 10mA 1V
    400nA ICBO
    -
    400mV @ 5mA, 50mA
    12V
    100mA
    500MHz
    500MHz
    20ns
    10ns
    ROHS3 Compliant
    4 Weeks
    3
    Automotive, AEC-Q101
    2009
    EAR99
    8541.21.00.75
    BSV52
    0.4 V
    4pF
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSV52LT1G
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    DUAL
    GULL WING
    260
    -
    40
    3
    -
    -
    1
    -
    225mW
    SWITCHING
    NPN
    NPN
    40 @ 10mA 1V
    100nA ICBO
    -
    400mV @ 5mA, 50mA
    -
    -
    400MHz
    -
    -
    -
    ROHS3 Compliant
    4 Weeks
    3
    -
    2006
    EAR99
    -
    BSV52
    -
    -
    ACTIVE (Last Updated: 1 day ago)
    Tin
    Other Transistors
    12V
    225mW
    200mA
    400MHz
    Single
    300mW
    400MHz
    12V
    100mA
    12V
    400mV
    12V
    20V
    1.2V
    25
    1.01mm
    3.04mm
    1.4mm
    No SVHC
    No
    Lead Free
    -
    -
  • BSV52
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    -
    1
    -
    -
    SWITCHING
    NPN
    NPN
    40 @ 10mA 1V
    100nA ICBO
    -
    400mV @ 5mA, 50mA
    -
    -
    400MHz
    -
    -
    -
    RoHS Compliant
    39 Weeks
    3
    -
    2000
    EAR99
    -
    BSV52
    -
    -
    LAST SHIPMENTS (Last Updated: 3 days ago)
    Tin
    Other Transistors
    12V
    225mW
    200mA
    400MHz
    Single
    225mW
    400MHz
    12V
    200mA
    12V
    400mV
    12V
    20V
    5V
    40
    930μm
    2.92mm
    1.3mm
    No SVHC
    No
    Lead Free
    Surface Mount
    30mg
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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