BLS7G2730L-200PU

Ampleon USA Inc. BLS7G2730L-200PU

Part Number:
BLS7G2730L-200PU
Manufacturer:
Ampleon USA Inc.
Ventron No:
2477485-BLS7G2730L-200PU
Description:
RF FET LDMOS 65V 12DB SOT539A
ECAD Model:
Datasheet:
BLS7G2730L-200PU

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Ampleon USA Inc. BLS7G2730L-200PU technical specifications, attributes, parameters and parts with similar specifications to Ampleon USA Inc. BLS7G2730L-200PU.
  • Factory Lead Time
    13 Weeks
  • Package / Case
    SOT539A
  • Supplier Device Package
    SOT539A
  • Packaging
    Tray
  • Published
    2010
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Voltage - Rated
    65V
  • Frequency
    2.7GHz~3GHz
  • Current - Test
    100mA
  • Transistor Type
    LDMOS (Dual), Common Source
  • Gain
    12dB
  • Power - Output
    200W
  • Voltage - Test
    32V
  • RoHS Status
    ROHS3 Compliant
Description
BLS7G2730L-200PU Overview
This product is manufactured by Ampleon USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLS7G2730L-200PU or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLS7G2730L-200PU. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BLS7G2730L-200PU More Descriptions
RF Power Transistor, 2.7- 3.0 GHz, 200W, 12 dB, 32V, LDMOS, SOT539A
Trans MOSFET N-CH 65V A 5-Pin SOT-539A Bulk
Product Description Demo for Development.
STANDARD MARKING * IC'S TUBE - DSC BULK PACK
Product Comparison
The three parts on the right have similar specifications to BLS7G2730L-200PU.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Package / Case
    Supplier Device Package
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Voltage - Rated
    Frequency
    Current - Test
    Transistor Type
    Gain
    Power - Output
    Voltage - Test
    RoHS Status
    Surface Mount
    Transistor Element Material
    Number of Terminations
    ECCN Code
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Transistor Application
    Polarity/Channel Type
    DS Breakdown Voltage-Min
    FET Technology
    View Compare
  • BLS7G2730L-200PU
    BLS7G2730L-200PU
    13 Weeks
    SOT539A
    SOT539A
    Tray
    2010
    Active
    1 (Unlimited)
    65V
    2.7GHz~3GHz
    100mA
    LDMOS (Dual), Common Source
    12dB
    200W
    32V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BLS7G3135LS-350P,1
    13 Weeks
    SOT539B
    -
    Tray
    2011
    Not For New Designs
    1 (Unlimited)
    65V
    3.5GHz
    200mA
    LDMOS (Dual), Common Source
    10dB
    320W
    32V
    ROHS3 Compliant
    YES
    SILICON
    4
    EAR99
    FLAT
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IEC-60134
    R-CDFP-F4
    2
    COMMON SOURCE, 2 ELEMENTS
    ENHANCEMENT MODE
    AMPLIFIER
    N-CHANNEL
    65V
    METAL-OXIDE SEMICONDUCTOR
  • BLS7G2730LS-200PU
    13 Weeks
    SOT539B
    -
    Tray
    2010
    Active
    1 (Unlimited)
    65V
    2.7GHz~3GHz
    100mA
    LDMOS (Dual), Common Source
    12dB
    200W
    32V
    ROHS3 Compliant
    YES
    SILICON
    4
    EAR99
    FLAT
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IEC-60134
    R-CDFP-F4
    2
    COMMON SOURCE, 2 ELEMENTS
    ENHANCEMENT MODE
    AMPLIFIER
    N-CHANNEL
    65V
    METAL-OXIDE SEMICONDUCTOR
  • BLS7G2729LS-350P,1
    13 Weeks
    SOT539B
    -
    Tray
    2011
    Not For New Designs
    1 (Unlimited)
    65V
    2.7GHz~2.9GHz
    200mA
    LDMOS (Dual), Common Source
    13dB
    350W
    32V
    ROHS3 Compliant
    YES
    SILICON
    4
    EAR99
    FLAT
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IEC-60134
    R-CDFP-F4
    2
    COMMON SOURCE, 2 ELEMENTS
    ENHANCEMENT MODE
    AMPLIFIER
    N-CHANNEL
    65V
    METAL-OXIDE SEMICONDUCTOR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.