Ampleon USA Inc. BLS7G3135LS-350P,1
- Part Number:
- BLS7G3135LS-350P,1
- Manufacturer:
- Ampleon USA Inc.
- Ventron No:
- 2848069-BLS7G3135LS-350P,1
- Description:
- RF FET LDMOS 65V 10DB SOT539B
- ECAD Model:
-
- Datasheet:
- BLS7G3135LS-350P,1
Ampleon USA Inc. BLS7G3135LS-350P,1 technical specifications, attributes, parameters and parts with similar specifications to Ampleon USA Inc. BLS7G3135LS-350P,1.
- Factory Lead Time13 Weeks
- Package / CaseSOT539B
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTray
- Published2011
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated65V
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Frequency3.5GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Reference StandardIEC-60134
- JESD-30 CodeR-CDFP-F4
- Number of Elements2
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Current - Test200mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS (Dual), Common Source
- Gain10dB
- DS Breakdown Voltage-Min65V
- Power - Output320W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test32V
- RoHS StatusROHS3 Compliant
BLS7G3135LS-350P,1 Overview
This product is manufactured by Ampleon USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLS7G3135LS-350P,1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLS7G3135LS-350P,1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Ampleon USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLS7G3135LS-350P,1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLS7G3135LS-350P,1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BLS7G3135LS-350P,1 More Descriptions
Transistor RF FET N-CH 65V 3100MHz to 3500MHz 5-Pin SOT-539B Bulk
RF Power Transistor, 3.1 to 3.4 GHz, 350 W, 12 dB, 32 V, LDMOS
RF FET LDMOS 65V 10DB SOT539B
RF Power Transistor, 3.1 to 3.4 GHz, 350 W, 12 dB, 32 V, LDMOS
RF FET LDMOS 65V 10DB SOT539B
The three parts on the right have similar specifications to BLS7G3135LS-350P,1.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - RatedTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeFrequencyTime@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeNumber of ElementsConfigurationOperating ModeCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusSupplier Device PackageView Compare
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BLS7G3135LS-350P,113 WeeksSOT539BYESSILICONTray2011Not For New Designs1 (Unlimited)4EAR9965VFLATNOT SPECIFIEDunknown3.5GHzNOT SPECIFIEDIEC-60134R-CDFP-F42COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODE200mAAMPLIFIERN-CHANNELLDMOS (Dual), Common Source10dB65V320WMETAL-OXIDE SEMICONDUCTOR32VROHS3 Compliant-- -
13 WeeksSOT539BYESSILICONTray2010Active1 (Unlimited)4EAR9965VFLATNOT SPECIFIEDunknown2.7GHz~3GHzNOT SPECIFIEDIEC-60134R-CDFP-F42COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODE100mAAMPLIFIERN-CHANNELLDMOS (Dual), Common Source12dB65V200WMETAL-OXIDE SEMICONDUCTOR32VROHS3 Compliant-
-
13 WeeksSOT539A--Tray2010Active1 (Unlimited)--65V---2.7GHz~3GHz------100mA--LDMOS (Dual), Common Source12dB-200W-32VROHS3 CompliantSOT539A
-
13 WeeksSOT539BYESSILICONTray2011Not For New Designs1 (Unlimited)4EAR9965VFLATNOT SPECIFIEDunknown2.7GHz~2.9GHzNOT SPECIFIEDIEC-60134R-CDFP-F42COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODE200mAAMPLIFIERN-CHANNELLDMOS (Dual), Common Source13dB65V350WMETAL-OXIDE SEMICONDUCTOR32VROHS3 Compliant-
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