Ampleon USA Inc. BLS6G3135-120,112
- Part Number:
- BLS6G3135-120,112
- Manufacturer:
- Ampleon USA Inc.
- Ventron No:
- 2477432-BLS6G3135-120,112
- Description:
- RF FET LDMOS 60V 11DB SOT502A
- Datasheet:
- BLS6G3135-120,112
Ampleon USA Inc. BLS6G3135-120,112 technical specifications, attributes, parameters and parts with similar specifications to Ampleon USA Inc. BLS6G3135-120,112.
- Factory Lead Time13 Weeks
- Package / CaseSOT-502A
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTray
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Voltage - Rated60V
- Current Rating (Amps)7.2A
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Frequency3.1GHz~3.5GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBLS6G3135
- Reference StandardIEC-60134
- JESD-30 CodeR-CDFM-F2
- Operating Temperature (Max)225°C
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test100mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Gain11dB
- Drain Current-Max (Abs) (ID)7.2A
- DS Breakdown Voltage-Min60V
- Power - Output120W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test32V
- RoHS StatusROHS3 Compliant
BLS6G3135-120,112 Overview
This product is manufactured by Ampleon USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLS6G3135-120,112 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLS6G3135-120,112. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Ampleon USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLS6G3135-120,112 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLS6G3135-120,112. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BLS6G3135-120,112 More Descriptions
RF Power Transistor, 3.1 to 3.5 GHz, 120 W, 11 dB, 32 V, LDMOS, SOT-502A
Trans MOSFET N-CH 60V 7.2A 3-Pin LDMOST Blister
LDMOS S-Band radar power transistor
N Channel S-Band Ldmos Transistor, 32V, 3100Mhz - 3500Mhz, 2-Sot-502B; Drain Source Voltage Vds:32V; Continuous Drain Current Id:7.2A; Power Dissipation:120W; Operating Frequency Min:3.1Ghz; Operating Frequency Max:3.5Ghz; Msl:- Rohs Compliant: Yes |Ampleon BLS6G3135-120,112
Trans MOSFET N-CH 60V 7.2A 3-Pin LDMOST Blister
LDMOS S-Band radar power transistor
N Channel S-Band Ldmos Transistor, 32V, 3100Mhz - 3500Mhz, 2-Sot-502B; Drain Source Voltage Vds:32V; Continuous Drain Current Id:7.2A; Power Dissipation:120W; Operating Frequency Min:3.1Ghz; Operating Frequency Max:3.5Ghz; Msl:- Rohs Compliant: Yes |Ampleon BLS6G3135-120,112
The three parts on the right have similar specifications to BLS6G3135-120,112.
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ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - RatedCurrent Rating (Amps)Terminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberReference StandardJESD-30 CodeOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusSupplier Device PackageView Compare
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BLS6G3135-120,11213 WeeksSOT-502AYESSILICONTray2008Active1 (Unlimited)2EAR9960V7.2ADUALFLATNOT SPECIFIEDunknown3.1GHz~3.5GHzNOT SPECIFIEDBLS6G3135IEC-60134R-CDFM-F2225°C1SINGLEENHANCEMENT MODESOURCE100mAAMPLIFIERN-CHANNELLDMOS11dB7.2A60V120WMETAL-OXIDE SEMICONDUCTOR32VROHS3 Compliant--
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13 WeeksSOM038--Tray-Active1 (Unlimited)--32V-------BLS6G2731-------100mA--LDMOS-----32VROHS3 CompliantLDMOST
-
13 WeeksSOT-608AYESSILICONTray2009Not For New Designs1 (Unlimited)2EAR9960V2.1ADUALFLATNOT SPECIFIED-3.1GHz~3.5GHzNOT SPECIFIEDBLS6G3135IEC-60134S-CDFM-F2225°C1SINGLEENHANCEMENT MODESOURCE50mAAMPLIFIERN-CHANNELLDMOS15.5dB2.1A60V20WMETAL-OXIDE SEMICONDUCTOR32VROHS3 Compliant-
-
13 WeeksSOT-1135AYESSILICONTray2010Not For New Designs1 (Unlimited)2EAR9960V-DUALFLATNOT SPECIFIEDunknown3.1GHz~3.5GHzNOT SPECIFIED-IEC-60134S-CDFM-F2-1SINGLEENHANCEMENT MODESOURCE50mAAMPLIFIERN-CHANNELLDMOS13dB-65V30WMETAL-OXIDE SEMICONDUCTOR32VROHS3 Compliant-
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