BLS6G2933S-130,112

Ampleon USA Inc. BLS6G2933S-130,112

Part Number:
BLS6G2933S-130,112
Manufacturer:
Ampleon USA Inc.
Ventron No:
3585892-BLS6G2933S-130,112
Description:
RF FET LDMOS 60V 12.5DB SOT9221
ECAD Model:
Datasheet:
BLS6G2933S-130,112

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Specifications
Ampleon USA Inc. BLS6G2933S-130,112 technical specifications, attributes, parameters and parts with similar specifications to Ampleon USA Inc. BLS6G2933S-130,112.
  • Factory Lead Time
    13 Weeks
  • Package / Case
    SOT922-1
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tray
  • Published
    2009
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Voltage - Rated
    60V
  • Current Rating (Amps)
    33A
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Frequency
    2.9GHz~3.3GHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Reference Standard
    IEC-60134
  • JESD-30 Code
    R-CDFP-F2
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Current - Test
    100mA
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Gain
    12.5dB
  • Drain Current-Max (Abs) (ID)
    33A
  • DS Breakdown Voltage-Min
    60V
  • Power - Output
    130W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    32V
  • RoHS Status
    ROHS3 Compliant
Description
BLS6G2933S-130,112 Overview
This product is manufactured by Ampleon USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLS6G2933S-130,112 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLS6G2933S-130,112. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BLS6G2933S-130,112 More Descriptions
RF Power Transistor, 2.9 to 3.3 GHz, 130 W, 12.5 dB, 32 V, LDMOS, SOT-922-1
RF MOSFET LDMOS 32V CDFM2
RF FET LDMOS 60V 12.5DB SOT9221
RF Components
Product Comparison
The three parts on the right have similar specifications to BLS6G2933S-130,112.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Voltage - Rated
    Current Rating (Amps)
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Current - Test
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Gain
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Power - Output
    FET Technology
    Voltage - Test
    RoHS Status
    Base Part Number
    Operating Temperature (Max)
    View Compare
  • BLS6G2933S-130,112
    BLS6G2933S-130,112
    13 Weeks
    SOT922-1
    YES
    SILICON
    Tray
    2009
    Active
    1 (Unlimited)
    2
    EAR99
    60V
    33A
    DUAL
    FLAT
    NOT SPECIFIED
    unknown
    2.9GHz~3.3GHz
    NOT SPECIFIED
    IEC-60134
    R-CDFP-F2
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    100mA
    AMPLIFIER
    N-CHANNEL
    LDMOS
    12.5dB
    33A
    60V
    130W
    METAL-OXIDE SEMICONDUCTOR
    32V
    ROHS3 Compliant
    -
    -
    -
  • BLS6G3135-120,112
    13 Weeks
    SOT-502A
    YES
    SILICON
    Tray
    2008
    Active
    1 (Unlimited)
    2
    EAR99
    60V
    7.2A
    DUAL
    FLAT
    NOT SPECIFIED
    unknown
    3.1GHz~3.5GHz
    NOT SPECIFIED
    IEC-60134
    R-CDFM-F2
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    100mA
    AMPLIFIER
    N-CHANNEL
    LDMOS
    11dB
    7.2A
    60V
    120W
    METAL-OXIDE SEMICONDUCTOR
    32V
    ROHS3 Compliant
    BLS6G3135
    225°C
  • BLS6G3135-20,112
    13 Weeks
    SOT-608A
    YES
    SILICON
    Tray
    2009
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    60V
    2.1A
    DUAL
    FLAT
    NOT SPECIFIED
    -
    3.1GHz~3.5GHz
    NOT SPECIFIED
    IEC-60134
    S-CDFM-F2
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    50mA
    AMPLIFIER
    N-CHANNEL
    LDMOS
    15.5dB
    2.1A
    60V
    20W
    METAL-OXIDE SEMICONDUCTOR
    32V
    ROHS3 Compliant
    BLS6G3135
    225°C
  • BLS6G2735L-30,112
    13 Weeks
    SOT-1135A
    YES
    SILICON
    Tray
    2010
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    60V
    -
    DUAL
    FLAT
    NOT SPECIFIED
    unknown
    3.1GHz~3.5GHz
    NOT SPECIFIED
    IEC-60134
    S-CDFM-F2
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    50mA
    AMPLIFIER
    N-CHANNEL
    LDMOS
    13dB
    -
    65V
    30W
    METAL-OXIDE SEMICONDUCTOR
    32V
    ROHS3 Compliant
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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