Ampleon USA Inc. BLL6H1214L-250,112
- Part Number:
- BLL6H1214L-250,112
- Manufacturer:
- Ampleon USA Inc.
- Ventron No:
- 2477456-BLL6H1214L-250,112
- Description:
- RF FET LDMOS 100V 17DB SOT502A
- ECAD Model:
-
- Datasheet:
- BLL6H1214L-250,112
Ampleon USA Inc. BLL6H1214L-250,112 technical specifications, attributes, parameters and parts with similar specifications to Ampleon USA Inc. BLL6H1214L-250,112.
- Factory Lead Time13 Weeks
- Package / CaseSOT-502A
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTray
- Published2010
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Voltage - Rated100V
- Current Rating (Amps)42A
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Frequency1.2GHz~1.4GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBLL6H1214
- Reference StandardIEC-60134
- JESD-30 CodeR-CDFM-F2
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test100mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Gain17dB
- Drain Current-Max (Abs) (ID)42A
- DS Breakdown Voltage-Min100V
- Power - Output250W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
BLL6H1214L-250,112 Overview
This product is manufactured by Ampleon USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLL6H1214L-250,112 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLL6H1214L-250,112. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Ampleon USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLL6H1214L-250,112 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLL6H1214L-250,112. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BLL6H1214L-250,112 More Descriptions
N CHANNEL L-BAND LDMOS TRANSISTOR, 50V, 1200MHZ - 1400MHZ, 2-SOT-502B
Transistor RF FET N-CH 100V 42A 1200MHz to 1400MHz 3-Pin SOT-502A Bulk
Trans RF MOSFET N-CH 100V 42A 3-Pin LDMOST Blister
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
TRANS L-BAND RADAR LDMOS SOT502A
Transistor RF FET N-CH 100V 42A 1200MHz to 1400MHz 3-Pin SOT-502A Bulk
Trans RF MOSFET N-CH 100V 42A 3-Pin LDMOST Blister
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
TRANS L-BAND RADAR LDMOS SOT502A
The three parts on the right have similar specifications to BLL6H1214L-250,112.
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ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - RatedCurrent Rating (Amps)Terminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberReference StandardJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusView Compare
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BLL6H1214L-250,11213 WeeksSOT-502AYESSILICONTray2010Active1 (Unlimited)2EAR99100V42ADUALFLATNOT SPECIFIEDunknown1.2GHz~1.4GHzNOT SPECIFIEDBLL6H1214IEC-60134R-CDFM-F21SINGLEENHANCEMENT MODESOURCE100mAAMPLIFIERN-CHANNELLDMOS17dB42A100V250WMETAL-OXIDE SEMICONDUCTOR50VROHS3 Compliant- -
13 WeeksSOT-502BYESSILICONTray2010Active1 (Unlimited)2EAR99100V42ADUALFLATNOT SPECIFIEDunknown1.2GHz~1.4GHzNOT SPECIFIEDBLL6H1214IEC-60134R-CDFP-F21SINGLEENHANCEMENT MODESOURCE100mAAMPLIFIERN-CHANNELLDMOS17dB42A100V250WMETAL-OXIDE SEMICONDUCTOR50VROHS3 Compliant
-
13 WeeksSOT-1135AYESSILICONTray2010Not For New Designs1 (Unlimited)2EAR99100V18ADUALFLATNOT SPECIFIEDunknown1.2GHz~1.4GHzNOT SPECIFIEDBLL6H0514IEC-60134S-CDFM-F21SINGLEENHANCEMENT MODESOURCE50mAAMPLIFIERN-CHANNELLDMOS17dB18A100V130WMETAL-OXIDE SEMICONDUCTOR50VROHS3 Compliant
-
13 WeeksSOT467CYESSILICONTray2010Not For New Designs1 (Unlimited)2EAR99100V2.5ADUALFLATNOT SPECIFIEDunknown1.2GHz~1.4GHzNOT SPECIFIEDBLL6H0514IEC-60134R-CDFM-F21SINGLEENHANCEMENT MODESOURCE50mAAMPLIFIERN-CHANNELLDMOS21dB2.5A100V25WMETAL-OXIDE SEMICONDUCTOR50VROHS3 Compliant
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