BLL6G1214LS-250,11

Ampleon USA Inc. BLL6G1214LS-250,11

Part Number:
BLL6G1214LS-250,11
Manufacturer:
Ampleon USA Inc.
Ventron No:
3069865-BLL6G1214LS-250,11
Description:
RF FET LDMOS 89V 15DB SOT502B
ECAD Model:
Datasheet:
BLL6G1214LS-250,11

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Specifications
Ampleon USA Inc. BLL6G1214LS-250,11 technical specifications, attributes, parameters and parts with similar specifications to Ampleon USA Inc. BLL6G1214LS-250,11.
  • Package / Case
    SOT-502B
  • Supplier Device Package
    SOT502B
  • Packaging
    Tray
  • Published
    2015
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Voltage - Rated
    89V
  • Frequency
    1.2GHz~1.4GHz
  • Current - Test
    150mA
  • Transistor Type
    LDMOS
  • Gain
    15dB
  • Power - Output
    250W
  • Voltage - Test
    36V
  • RoHS Status
    Non-RoHS Compliant
Description
BLL6G1214LS-250,11 Overview
This product is manufactured by Ampleon USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLL6G1214LS-250,11 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLL6G1214LS-250,11. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BLL6G1214LS-250,11 More Descriptions
L-Band Radar Power LDMOS Transistor 250W 1.2GHz to 1.4GHz 3-Pin SOT-502B Bulk
RF Power Transistor, 1.2- 1.4 GHz, 250 W
RF FET LDMOS 89V 15DB SOT502B
FET RF 89V 1.4GHZ
Product Comparison
The three parts on the right have similar specifications to BLL6G1214LS-250,11.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Supplier Device Package
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Voltage - Rated
    Frequency
    Current - Test
    Transistor Type
    Gain
    Power - Output
    Voltage - Test
    RoHS Status
    Factory Lead Time
    Surface Mount
    Transistor Element Material
    Number of Terminations
    ECCN Code
    Current Rating (Amps)
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    FET Technology
    View Compare
  • BLL6G1214LS-250,11
    BLL6G1214LS-250,11
    SOT-502B
    SOT502B
    Tray
    2015
    Obsolete
    1 (Unlimited)
    89V
    1.2GHz~1.4GHz
    150mA
    LDMOS
    15dB
    250W
    36V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BLL6H0514L-130,112
    SOT-1135A
    -
    Tray
    2010
    Not For New Designs
    1 (Unlimited)
    100V
    1.2GHz~1.4GHz
    50mA
    LDMOS
    17dB
    130W
    50V
    ROHS3 Compliant
    13 Weeks
    YES
    SILICON
    2
    EAR99
    18A
    DUAL
    FLAT
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    BLL6H0514
    IEC-60134
    S-CDFM-F2
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    AMPLIFIER
    N-CHANNEL
    18A
    100V
    METAL-OXIDE SEMICONDUCTOR
  • BLL6H0514-25,112
    SOT467C
    -
    Tray
    2010
    Not For New Designs
    1 (Unlimited)
    100V
    1.2GHz~1.4GHz
    50mA
    LDMOS
    21dB
    25W
    50V
    ROHS3 Compliant
    13 Weeks
    YES
    SILICON
    2
    EAR99
    2.5A
    DUAL
    FLAT
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    BLL6H0514
    IEC-60134
    R-CDFM-F2
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    AMPLIFIER
    N-CHANNEL
    2.5A
    100V
    METAL-OXIDE SEMICONDUCTOR
  • BLL6H0514LS-130,11
    SOT-1135B
    -
    Tray
    2010
    Not For New Designs
    1 (Unlimited)
    100V
    1.2GHz~1.4GHz
    50mA
    LDMOS
    17dB
    130W
    50V
    ROHS3 Compliant
    13 Weeks
    YES
    SILICON
    2
    EAR99
    18A
    DUAL
    FLAT
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    BLL6H0514
    IEC-60134
    S-CDFP-F2
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    AMPLIFIER
    N-CHANNEL
    18A
    100V
    METAL-OXIDE SEMICONDUCTOR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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