Infineon Technologies BFN26E6433HTMA1

Name: BFN26E6433HTMA1
Brand: Infineon Technologies
SKU: 2847139-BFN26E6433HTMA1
Availability: InStock
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Part Number:: BFN26E6433HTMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2847139-BFN26E6433HTMA1

Description:: TRANS NPN 300V 0.2A SOT-23

ECAD Model:

Datasheet:: BFN26E6433HTMA1

Specifications

Infineon Technologies BFN26E6433HTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFN26E6433HTMA1.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
360mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
70MHz
Base Part Number
BFN26
Number of Elements
1
Configuration
SINGLE
Power Dissipation
360mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
70MHz
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

BFN26E6433HTMA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 30mA 10V.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 200mA volts can be achieved.

BFN26E6433HTMA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz

BFN26E6433HTMA1 Applications
There are a lot of Infineon Technologies
BFN26E6433HTMA1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BFN26E6433HTMA1 More Descriptions

Trans GP BJT NPN 300V 0.2A 3-Pin SOT-23 T/R

Certification