Infineon Technologies BFN24E6327HTSA1
- Part Number:
- BFN24E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2476553-BFN24E6327HTSA1
- Description:
- TRANS NPN 250V 0.2A SOT-23
- Datasheet:
- BFN24E6327HTSA1
Infineon Technologies BFN24E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFN24E6327HTSA1.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBFN24
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- ConfigurationSINGLE
- Power - Max360mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 2mA, 20mA
- Voltage - Collector Emitter Breakdown (Max)250V
- Current - Collector (Ic) (Max)200mA
- Transition Frequency70MHz
- Frequency - Transition70MHz
- RoHS StatusROHS3 Compliant
BFN24E6327HTSA1 Overview
DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 2mA, 20mA.As a result, the part has a transition frequency of 70MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BFN24E6327HTSA1 Features
the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 400mV @ 2mA, 20mA
a transition frequency of 70MHz
BFN24E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN24E6327HTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 2mA, 20mA.As a result, the part has a transition frequency of 70MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BFN24E6327HTSA1 Features
the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 400mV @ 2mA, 20mA
a transition frequency of 70MHz
BFN24E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN24E6327HTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BFN24E6327HTSA1 More Descriptions
Transistor: NPN, bipolar, 250V, 200mA, 360mW, SOT23
Tape & Reel (TR) Surface Mount NPN ROHS3Compliant Bipolar (BJT) Transistor 40 @ 30mA 10V 200mA 360mW 70MHz
NPN Silicon High-Voltage Transistors | Summary of Features: Suitable for video output stages in TV sets and switching power supplies; High breakdown voltage; Low collector-emitter saturation voltage; Complementary type: BFN27 (PNP); Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Suitable for video output stages TV sets and switching power supplies
Tape & Reel (TR) Surface Mount NPN ROHS3Compliant Bipolar (BJT) Transistor 40 @ 30mA 10V 200mA 360mW 70MHz
NPN Silicon High-Voltage Transistors | Summary of Features: Suitable for video output stages in TV sets and switching power supplies; High breakdown voltage; Low collector-emitter saturation voltage; Complementary type: BFN27 (PNP); Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Suitable for video output stages TV sets and switching power supplies
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